Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
![]() |
Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parametersYurasov, D. V. ; Drozdov, M. N. ; Zakharov, N. D. ; Novikov, A. V.Journal of Crystal Growth, June 15, 2014, Vol.396, p.66(5) [Periódico revisado por pares]Texto completo disponível |
2 |
Material Type: Artigo
|
![]() |
Usage of antimony segregation for selective doping of Si in molecular beam epitaxy.(Report)Yurasov, D. V. ; Drozdov, M. N. ; Murel, A. V. ; Shaleev, M. V. ; Zakharov, N. D. ; Novikov, A. V.Journal of Applied Physics, June 1, 2011, Vol.109(11), p.113533-1-113533-7 [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
|
![]() |
Aperiodic SiSn/Si multilayers for thermoelectric applicationsTonkikh, A.A. ; Zakharov, N.D. ; Eisenschmidt, C. ; Leipner, H.S. ; Werner, P.Journal of Crystal Growth, April 15, 2014, Vol.392, p.49(3) [Periódico revisado por pares]Texto completo disponível |
4 |
Material Type: Artigo
|
![]() |
Sb mediated formation of Ge/Si quantum dots: Growth and propertiesTonkikh, A.A ; Zakharov, N.D ; Novikov, A.V ; Kudryavtsev, K.E ; Talalaev, V.G ; Fuhrmann, B ; Leipner, H.S ; Werner, PThin Solid Films, 01 February 2012, Vol.520(8), pp.3322-3325 [Periódico revisado por pares]Texto completo disponível |
5 |
Material Type: Artigo
|
![]() |
Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum wellTonkikh, A.A. ; Zakharov, N.D. ; Talalaev, V.G. ; Eisenschmidt, C. ; Schilling, J. ; Werner, P.Journal of Crystal Growth, Sept 1, 2015, Vol.425, p.172(5) [Periódico revisado por pares]Texto completo disponível |
6 |
Material Type: Artigo
|
![]() |
Sb-modified growth of stacked Ge/Si(100) quantum dotsTonkikh, A.A ; Zakharov, N.D ; Pippel, E ; Werner, PThin Solid Films, 2011, Vol.519(11), pp.3669-3673 [Periódico revisado por pares]Texto completo disponível |
7 |
Material Type: Artigo
|
![]() |
Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parametersYurasov, D.V ; Drozdov, M.N ; Zakharov, N.D ; Novikov, A.VJournal of Crystal Growth, 15 June 2014, Vol.396, pp.66-70 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
|
![]() |
Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum wellTonkikh, A.A ; Zakharov, N.D ; Talalaev, V.G ; Eisenschmidt, C ; Schilling, J ; Werner, PJournal of Crystal Growth, 01 September 2015, Vol.425, pp.172-176 [Periódico revisado por pares]Texto completo disponível |
9 |
Material Type: Artigo
|
![]() |
Aperiodic SiSn/Si multilayers for thermoelectric applicationsTonkikh, A.A ; Zakharov, N.D ; Eisenschmidt, C ; Leipner, H.S ; Werner, PJournal of Crystal Growth, 15 April 2014, Vol.392, pp.49-51 [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
|
![]() |
Structure of UMo.sub.4O.sub.14 oxideZakharov, N. D. ; Pippel, E. ; Hillebrand, R. ; Werner, P.Progress in Nuclear Energy, May, 2012, Vol.57, p.150(5) [Periódico revisado por pares]Texto completo disponível |