skip to main content
Idioma:
Primo Advanced Search
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search prefilters
Busca Simples
Refinado por: assunto: Transistors remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
New device structure using array transistors and flexible U-grooves suitable for 18-V, high-performance SOI complementary bipolar LSIs
New device structure using array transistors and flexible U-grooves suitable for 18-V, high-performance SOI complementary bipolar LSIs
Material Type:
Artigo 		Adicionar ao Meu Espaço

New device structure using array transistors and flexible U-grooves suitable for 18-V, high-performance SOI complementary bipolar LSIs

Tamaki, Y. ; Tsuji, K. ; Otani, O. ; Nonami, H. ; Tomatsuri, T. ; Yoshida, E. ; Hamamoto, M. ; Nakazato, N.

IEEE transactions on semiconductor manufacturing, 2005-05, Vol.18 (2), p.272-278 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
2
Double-layer μc-Si/a-SiCx emitter in a silicon heterojunction bipolar transistor with a cutoff frequency of 47 GHz
Double-layer μc-Si/a-SiCx emitter in a silicon heterojunction bipolar transistor with a cutoff frequency of 47 GHz
Material Type:
Artigo 		Adicionar ao Meu Espaço

Double-layer μc-Si/a-SiCx emitter in a silicon heterojunction bipolar transistor with a cutoff frequency of 47 GHz

KONDO, M ; SHIBA, T ; TAMAKI, Y ; NAKAMURA, T

Journal of the Electrochemical Society, 1996-06, Vol.143 (6), p.1949-1955 [Periódico revisado por pares]

Pennington, NJ: Electrochemical Society

Texto completo disponível

Citações Citado por
3
Advanced process device technology for 0.3- mu m high-performance bipolar LSIs
Advanced process device technology for 0.3- mu m high-performance bipolar LSIs
Material Type:
Artigo 		Adicionar ao Meu Espaço

Advanced process device technology for 0.3- mu m high-performance bipolar LSIs

Tamaki, Y. ; Shiba, T. ; Kure, T. ; Ohyu, K. ; Nakamura, T.

IEEE transactions on electron devices, 1992-06, Vol.39 (6), p.1387-1391 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
4
High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors
High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors

Miyamoto, M. ; Yano, K. ; Tamaki, Y. ; Aoki, M. ; Nishida, T. ; Seki, K. ; Shimohigashi, K.

IEEE transactions on electron devices, 1993-02, Vol.40 (2), p.378-384 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
5
The effect of thin interfacial oxides on the electrical characteristics of silicon bipolar devices
The effect of thin interfacial oxides on the electrical characteristics of silicon bipolar devices
Material Type:
Artigo 		Adicionar ao Meu Espaço

The effect of thin interfacial oxides on the electrical characteristics of silicon bipolar devices

Sagara, K. ; Nakamura, T. ; Tamaki, Y. ; Shiba, T.

IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2286-2290 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
6
Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. II: Band deformation due to residual stress in the polysilicon emitter: Bipolar BiCMOS/CMOS devices and technologies
Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. II: Band deformation due to residual stress in the polysilicon emitter: Bipolar BiCMOS/CMOS devices and technologies
Material Type:
Artigo 		Adicionar ao Meu Espaço

Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. II: Band deformation due to residual stress in the polysilicon emitter: Bipolar BiCMOS/CMOS devices and technologies

KONDO, M ; KOBAYASHI, T ; TAMAKI, Y

IEEE transactions on electron devices, 1995, Vol.42 (3), p.427-435 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

Texto completo disponível

Citações Citado por
7
Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. I: Band structure in the polysilicon emitter obtained from electrical measurements: Bipolar BiCMOS/CMOS devices and technologies
Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. I: Band structure in the polysilicon emitter obtained from electrical measurements: Bipolar BiCMOS/CMOS devices and technologies
Material Type:
Artigo 		Adicionar ao Meu Espaço

Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. I: Band structure in the polysilicon emitter obtained from electrical measurements: Bipolar BiCMOS/CMOS devices and technologies

KONDO, M ; KOBAYASHI, T ; TAMAKI, Y

IEEE transactions on electron devices, 1995, Vol.42 (3), p.419-426 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

Texto completo disponível

Citações Citado por
8
Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base: Bipolar BiCMOS/CMOS devices and technologies
Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base: Bipolar BiCMOS/CMOS devices and technologies
Material Type:
Artigo 		Adicionar ao Meu Espaço

Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base: Bipolar BiCMOS/CMOS devices and technologies

UCHINO, T ; SHIBA, T ; KIKUCHI, T ; TAMAKI, Y ; WATANABE, A ; KIYOTA, Y

IEEE transactions on electron devices, 1995, Vol.42 (3), p.406-412 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

Texto completo disponível

Citações Citado por
9
A 64-GHz ft and 3.6-V BVCEOSi bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts
A 64-GHz ft and 3.6-V BVCEOSi bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts
Material Type:
Artigo 		Adicionar ao Meu Espaço

A 64-GHz ft and 3.6-V BVCEOSi bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts

NANBA, M ; UCHINO, T ; KONDO, M ; NAKAMURA, T ; KOBAYASHI, T ; TAMAKI, Y ; TANABE, M

IEEE transactions on electron devices, 1993, Vol.40 (8), p.1563-1565 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

Texto completo disponível

Citações Citado por
10
New device structure for 18-V, high-performance SOI complementary bipolar LSIs using array transistors and flexible U-grooves
New device structure for 18-V, high-performance SOI complementary bipolar LSIs using array transistors and flexible U-grooves
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

New device structure for 18-V, high-performance SOI complementary bipolar LSIs using array transistors and flexible U-grooves

Tamaki, Y. ; Tsuji, K. ; Ohtani, O. ; Nonami, H. ; Tomatsuri, T. ; Yoshida, E. ; Hamamoto, M. ; Nakazato, N.

Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516), 2004, p.143-147

Piscataway NJ: IEEE

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Recursos Online (10)
  2. Revistas revisadas por pares (9)

Refinar Meus Resultados

Tipo de Recurso 

  1. Artigos  (9)
  2. Anais de Congresso  (2)
  3. Mais opções open sub menu

Data de Publicação 

De até
Refinar
  1. Antes de1987  (1)
  2. 1987Até1989  (1)
  3. 1990Até1991  (1)
  4. 1992Até1993  (3)
  5. Após 1993  (6)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.