Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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167-MHz 1-Mbit CMOS synchronous cache SRAMYahata, Hideharu ; Nishio, Yoji ; Komiyaji, Kunihiro ; Toyoshima, Hiroshi ; Hiraishi, Atsushi ; Kinoshita, YoshitakaIEICE transactions on electronics, 1997, Vol.E80-C (4), p.557-565 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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25 Tesla pulsed-high-magnetic-field system for soft X-ray spectroscopyHayashi, M. ; Narumi, Y. ; Nojiri, H. ; Nakamura, T. ; Hirono, T. ; Kinoshita, T. ; Kodama, K. ; Kindo, K.Journal of electron spectroscopy and related phenomena, 2011-04, Vol.184 (3), p.338-341 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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4d–4f and 3d–4f resonant photoemission of TmX ( X = S, Se, Te)Kimura, S. ; Ufuktepe, Y. ; Nath, K.G. ; Kinoshita, T. ; Kumigashira, H. ; Takahashi, T. ; Matsumura, T. ; Suzuki, T. ; Ogasawara, H. ; Kotani, A.Journal of magnetism and magnetic materials, 1998, Vol.177, p.349-350, Article 349 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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5.8 ns 256 kb SRAM with 0.4 mu m super-CMOS process technologyKozaru, Kunihiko ; Kinoshita, Atsushi ; Wada, Tomohisa ; Arita, Yutaka ; Yamada, MichihiroIEICE transactions on electronics, 1997, Vol.E80-C (4), p.566-572 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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A 1 ns, 1 W, 2.5 V, 32 Kb NTL-CMOS SRAM macro using a memory cell with PMOS access transistorsOkamura, H. ; Toyoshima, H. ; Takeda, K. ; Oguri, T. ; Nakamura, S. ; Takada, M. ; Imai, K. ; Kinoshita, Y. ; Yoshida, H. ; Yamazaki, T.IEEE journal of solid-state circuits, 1995-11, Vol.30 (11), p.1196-1202 [Periódico revisado por pares]IEEETexto completo disponível |
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6 |
Material Type: Artigo
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A 10-b 50 MS/s 500-mW A/D converter using a differential-voltage subconverterMiki, T. ; Kouno, H. ; Kumamoto, T. ; Kinoshita, Y. ; Igarashi, T. ; Okada, K.IEEE journal of solid-state circuits, 1994-04, Vol.29 (4), p.516-522 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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A 2-V, 1-10 GHz BiCMOS transceiver chip for multimode wireless communications networksMadihian, M. ; Bak, E. ; Yoshida, H. ; Hirabayashi, H. ; Imai, K. ; Kinoshita, Y. ; Yamazaki, T. ; Desclos, L.IEEE journal of solid-state circuits, 1997-04, Vol.32 (4), p.521-525 [Periódico revisado por pares]IEEETexto completo disponível |
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8 |
Material Type: Artigo
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A 23-ns 1-Mb BiCMOS DRAMKitsukawa, G. ; Yanagisawa, K. ; Kobayashi, Y. ; Kinoshita, Y. ; Ohta, T. ; Udagawa, T. ; Miwa, H. ; Miyazawa, H. ; Kawajiri, Y. ; Ouchi, Y. ; Tsukada, H. ; Matsumoto, T. ; Itoh, K.IEEE journal of solid-state circuits, 1990-10, Vol.25 (5), p.1102-1111 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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A 3.9-μm pixel pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/pixelTAKAHASHI, Hidekazu ; KINOSHITA, Masakuni ; MORITA, Kazumichi ; SHIRAI, Takahiro ; SATO, Toshiaki ; KIMURA, Takayuki ; YUZURIHARA, Hiroshi ; INOUE, Shunsuke ; MATSUMOTO, ShigeyukiIEEE journal of solid-state circuits, 2004-12, Vol.39 (12), p.2417-2425 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
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10 |
Material Type: Artigo
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A 600V Deep-Implanted Gate Vertical JFETMizukami, Makoto ; Takikawa, Osamu ; Murooka, M. ; Imai, Seiji ; Kinoshita, Kozo ; Hatakeyama, Tetsuo ; Tsukuda, M. ; Saito, W. ; Omura, I. ; Shinohe, TakashiMaterials science forum, 2004-01, Vol.457-460, p.1217-1220 [Periódico revisado por pares]Sem texto completo |