Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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The study of electronic energy band structure by interband raman scatteringWright, G.B. ; Balkanski, M.Materials research bulletin, 1971-01, Vol.6 (10), p.1097-1102 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Raman study of the vibrational properties of implanted siliconMorhange, J. F. ; Beserman, R. ; Balkanski, M.Physica status solidi. A, Applied research, 1974-06, Vol.23 (2), p.383-391 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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3 |
Material Type: Artigo
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Theory of interference distortion of Raman scattering line shapes in semiconductorsBalkanski, M. ; Jain, K. P. ; Beserman, R. ; Jouanne, M.Physical review. B, Solid state, 1975-01, Vol.12 (10), p.4328-4337Sem texto completo |
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4 |
Material Type: Artigo
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Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surfaceSebenne, C. ; Bolmont, D. ; Guichar, G. ; Balkanski, M.Physical review. B, Solid state, 1975-01, Vol.12 (8), p.3280-3285Sem texto completo |
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5 |
Material Type: Artigo
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Non-enzymatic hydrolysis of acetylcholine studied by Raman spectrometryLautié, Alain ; Aslanian, Dimitrina ; Balkanski, Minko ; Merlin, Jean-Claude ; Dupaix, AlainJournal of Raman spectroscopy, 1978-12, Vol.7 (6), p.337-340 [Periódico revisado por pares]Chichester, UK: John Wiley & Sons, LtdSem texto completo |
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6 |
Material Type: Artigo
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Ferroelectric phase transition and non linear properties of SbSIBalkanski, M. ; Teng, M. K. ; Massot, M. ; Bilz, H.Ferroelectrics, 1980-01, Vol.26 (1), p.737-741 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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7 |
Material Type: Artigo
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Effect of dimensions on the vibrational frequencies of thin slabs of siliconKanellis, G. ; Morhange, J. F. ; Balkanski, M.Physical review. B, Condensed matter, 1980-01, Vol.21 (4), p.1543-1548Texto completo disponível |
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8 |
Material Type: Artigo
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Light scattering from laser annealed ion implanted semiconductorsBalkanski, M. ; Morhange, J. F. ; Kanellis, G.Journal of Raman spectroscopy, 1981-01, Vol.10 (1), p.240-245 [Periódico revisado por pares]Chichester, UK: John Wiley & Sons, LtdSem texto completo |
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9 |
Material Type: Artigo
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Charge Transfer Cr3+(3d3) - > Cr2+(3d4) in Chromium-Doped GaAsMartinez, G ; Hennel, A M ; Szuszkiewicz, W ; Balkanski, M ; Clerjaud, BPhysical review. B, Condensed matter, 1981-01, Vol.23 (8), p.3920-3932Texto completo disponível |
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10 |
Material Type: Artigo
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Interband electronic Raman scattering in p -siliconKanehisa, M. A. ; Wallis, R. F. ; Balkanski, M.Physical review. B, Condensed matter, 1982-01, Vol.25 (12), p.7619-7625Texto completo disponível |