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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Semiconductors remover
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A semiconductor under insulator technology in indium phosphide
A semiconductor under insulator technology in indium phosphide
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A semiconductor under insulator technology in indium phosphide

Mnaymneh, K. ; Dalacu, D. ; Frédérick, S. ; Lapointe, J. ; Poole, P. J. ; Williams, R. L.

Applied physics letters, 2012-10, Vol.101 (15) [Periódico revisado por pares]

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Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing
Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing
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Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing

Park, Dong-Wook ; Kim, Hyungsoo ; Bong, Jihye ; Mikael, Solomon ; Kim, Tong June ; Williams, Justin C. ; Ma, Zhenqiang

Applied physics letters, 2016-10, Vol.109 (15), p.152105-152105 [Periódico revisado por pares]

United States: American Institute of Physics

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3
Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering
Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering
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Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering

Jo, Wonhyuk ; Landahl, Eric C. ; DiChiara, Anthony D. ; Walko, Donald A. ; Lee, Sooheyong

Applied physics letters, 2018-07, Vol.113 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Two-dimensional 4f magnetic EuSn2X2 (X = P, As) monolayers: A first-principles study
Two-dimensional 4f magnetic EuSn2X2 (X = P, As) monolayers: A first-principles study
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Two-dimensional 4f magnetic EuSn2X2 (X = P, As) monolayers: A first-principles study

Bai, Yihang ; Wu, Yaxuan ; Jia, Chaobin ; Hou, Lipeng ; Wang, Bing

Applied physics letters, 2023-07, Vol.123 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies
Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies
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Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies

Rondiya, Sachin R. ; Jagt, Robert A. ; MacManus-Driscoll, Judith L. ; Walsh, Aron ; Hoye, Robert L. Z.

Applied physics letters, 2021-11, Vol.119 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Tunable self-trapped excitons in 2D layered rubrene
Tunable self-trapped excitons in 2D layered rubrene
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Tunable self-trapped excitons in 2D layered rubrene

Feng, Shaopeng ; Yang, Yutian ; Gao, Lei ; Watanabe, Kenji ; Taniguchi, Takashi ; Hu, Zhenliang ; Lu, Junpeng ; Ni, Zhenhua

Applied physics letters, 2021-06, Vol.118 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Universal alignment of surface and bulk oxygen levels in semiconductors
Universal alignment of surface and bulk oxygen levels in semiconductors
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Universal alignment of surface and bulk oxygen levels in semiconductors

Chakrapani, Vidhya

Applied physics letters, 2021-07, Vol.119 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Contrasting para- and ferro-magnetic responses of (Gd,Dy)N alloys
Contrasting para- and ferro-magnetic responses of (Gd,Dy)N alloys
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Contrasting para- and ferro-magnetic responses of (Gd,Dy)N alloys

Pot, C. ; Holmes-Hewett, W. F. ; Ruck, B. J. ; Trodahl, H. J.

Applied physics letters, 2021-10, Vol.119 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Charge carrier scattering and ultrafast Auger dynamics in two-dimensional superatomic semiconductors
Charge carrier scattering and ultrafast Auger dynamics in two-dimensional superatomic semiconductors
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Charge carrier scattering and ultrafast Auger dynamics in two-dimensional superatomic semiconductors

Kim, Heejae ; Lee, Kihong ; Dismukes, Avalon H. ; Choi, Bonnie ; Roy, Xavier ; Zhu, Xiaoyang ; Bonn, Mischa

Applied physics letters, 2020-05, Vol.116 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Autonomous growth of NbN nanostructures on atomically flat AlN surfaces
Autonomous growth of NbN nanostructures on atomically flat AlN surfaces
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Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Kobayashi, Atsushi ; Ueno, Kohei ; Fujioka, Hiroshi

Applied physics letters, 2020-12, Vol.117 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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