Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Electron temperature in electrically isolated Si double quantum dotsRossi, A ; Ferrus, T ; Williams, D AApplied physics letters, 2012-03, Vol.100 (13), p.133503-133503-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygenSallis, S. ; Butler, K. T. ; Quackenbush, N. F. ; Williams, D. S. ; Junda, M. ; Fischer, D. A. ; Woicik, J. C. ; Podraza, N. J. ; White, B. E. ; Walsh, A. ; Piper, L. F. J.Applied physics letters, 2014-06, Vol.104 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Charge sensing in intrinsic silicon quantum dotsPodd, G J ; Angus, S J ; Williams, D A ; Ferguson, A JApplied physics letters, 2010-02, Vol.96 (8), p.082104-082104-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Multiwalled carbon nanotube sheets as transparent electrodes in high brightness organic light-emitting diodesWilliams, Christopher D. ; Robles, Raquel Ovalle ; Zhang, Mei ; Li, Sergey ; Baughman, Ray H. ; Zakhidov, Anvar A.Applied physics letters, 2008-11, Vol.93 (18) [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Charge detection in phosphorus-doped silicon double quantum dotsRossi, A ; Ferrus, T ; Podd, G J ; Williams, D AApplied physics letters, 2010-11, Vol.97 (22), p.223506-223506-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Temperature dependence of hole transport properties through physically defined silicon quantum dotsShimatani, N. ; Yamaoka, Y. ; Ishihara, R. ; Andreev, A. ; Williams, D. A. ; Oda, S. ; Kodera, T.Applied physics letters, 2020-08, Vol.117 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Strongly coupled single quantum dot in a photonic crystal waveguide cavityBrossard, F S. F ; Xu, X L ; Williams, D A ; Hadjipanayi, M ; Hugues, M ; Hopkinson, M ; Wang, X ; Taylor, R AApplied physics letters, 2010-09, Vol.97 (11), p.111101-111101-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Quantum dots in single electron transistors with ultrathin silicon-on-insulator structuresIhara, S. ; Andreev, A. ; Williams, D. A. ; Kodera, T. ; Oda, S.Applied physics letters, 2015-07, Vol.107 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Nanotransfer printing of organic and carbon nanotube thin-film transistors on plastic substratesHines, D R ; Mezhenny, S ; Breban, M ; Williams, E D ; Ballarotto, V W ; Esen, G ; Southard, A ; Fuhrer, M SApplied physics letters, 2005-04, Vol.86 (16), p.163101-163101-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Radiation-damage in multi-layered zircon: Mechanical propertiesBeirau, Tobias ; Oliver, Warren C. ; Reissner, Claudia E. ; Nix, William D. ; Pöllmann, Herbert ; Ewing, Rodney C.Applied physics letters, 2019-08, Vol.115 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |