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Refinado por: assunto: Physics remover
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Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
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Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

Ji, Dong ; Liu, Bing ; Lu, Yanwu ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2012-03, Vol.100 (13) [Periódico revisado por pares]

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2
Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
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Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy

Zhang, Riqing ; Zhang, Panfeng ; Kang, Tingting ; Fan, Haibo ; Liu, Xianglin ; Yang, Shaoyan ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2007-10, Vol.91 (16) [Periódico revisado por pares]

United States

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3
Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction
Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction
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Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction

Liu, Bing ; Lu, Yanwu ; Huang, Yan ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo

Physics letters. A, 2012-02, Vol.376 (10-11), p.1067-1071 [Periódico revisado por pares]

Elsevier B.V

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4
Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
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Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Ji, Dong ; Lu, Yanwu ; Liu, Bing ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo

Thin solid films, 2013-05, Vol.534, p.655-658 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces
Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces
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Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

Li, Huijie ; Zhao, Guijuan ; Liu, Guipeng ; Wei, Hongyuan ; Jiao, Chunmei ; Yang, Shaoyan ; Wang, Lianshan ; Zhu, Qinsheng

Journal of applied physics, 2014-05, Vol.115 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
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Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

Xu, Xiaoqing ; Liu, Xianglin ; Guo, Yan ; Wang, Jun ; Song, Huaping ; Yang, Shaoyan ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of applied physics, 2010-05, Vol.107 (10), p.104510-104510-6 [Periódico revisado por pares]

American Institute of Physics

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7
Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy
Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy
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Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Li, Huijie ; Liu, Xianglin ; Sang, Ling ; Wang, Jianxia ; Jin, Dongdong ; Zhang, Heng ; Yang, Shaoyan ; Liu, Shuman ; Mao, Wei ; Hao, Yue ; Zhu, Qinsheng ; Wang, Zhanguo

Physica Status Solidi. B: Basic Solid State Physics, 2014-04, Vol.251 (4), p.788-791 [Periódico revisado por pares]

Blackwell Publishing Ltd

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8
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Li, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2012-06, Vol.348 (1), p.10-14 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Li, Huijie ; Liu, Guipeng ; Wei, Hongyuan ; Jiao, Chunmei ; Wang, Jianxia ; Zhang, Heng ; Dong Jin, Dong ; Feng, Yuxia ; Yang, Shaoyan ; Wang, Lianshan ; Zhu, Qinsheng ; Wang, Zhan-Guo

Applied physics letters, 2013-12, Vol.103 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Ji, Dong ; Lu, Yanwu ; Liu, Bing ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo

Solid state communications, 2013-01, Vol.153 (1), p.53-57 [Periódico revisado por pares]

Kidlington: Elsevier Ltd

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