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Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs
Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs
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Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs

Wong, Hiu Yung ; Takeuchi, Hideki ; Mears, Robert J.

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.229-232

The Japan Society of Applied Physics

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2
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination
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Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination

Pilotto, Alessandro ; M'Foukh, Adel ; Dollfus, Philippe ; Saint-Martin, Jeriome ; Pala, Marco G.

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.301-304

The Japan Society of Applied Physics

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3
Lattice Thermal Conductivity of Silicon and Germanium Core/Shell and Segmented Nanowires
Lattice Thermal Conductivity of Silicon and Germanium Core/Shell and Segmented Nanowires
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Lattice Thermal Conductivity of Silicon and Germanium Core/Shell and Segmented Nanowires

Isacova, C. I. ; Zincenco, N. D. ; Boris, I. B. ; Nika, D. L.

Physics of the solid state, 2023-06, Vol.65 (2-6), p.89-105 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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4
Observation of Long-Lived UV-Induced Fluorescence from Environmental Materials Using the HVeV Detector as Developed for SuperCDMS
Observation of Long-Lived UV-Induced Fluorescence from Environmental Materials Using the HVeV Detector as Developed for SuperCDMS
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Observation of Long-Lived UV-Induced Fluorescence from Environmental Materials Using the HVeV Detector as Developed for SuperCDMS

Ponce, F. ; Brink, P. L. ; Cabrera, B. ; Cherry, M. ; Kurinsky, N. A. ; Page, W. A. ; Partridge, R. ; Stanford, C. ; Watkins, S. L. ; Yellin, S. ; Young, B. A.

Journal of low temperature physics, 2022-12, Vol.209 (5-6), p.1172-1179 [Periódico revisado por pares]

New York: Springer US

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5
Near-field radiative heat transfer in the three-body system made of nanoporous silicon carbide
Near-field radiative heat transfer in the three-body system made of nanoporous silicon carbide
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Near-field radiative heat transfer in the three-body system made of nanoporous silicon carbide

Li, Xiaohong ; Wang, Tongbiao ; Yu, Tianbao ; Liao, Qinghua

The European physical journal. B, Condensed matter physics, 2022-09, Vol.95 (9), Article 140 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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6
Electronic and magnetic properties of iridium-based novel Heusler alloys
Electronic and magnetic properties of iridium-based novel Heusler alloys
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Electronic and magnetic properties of iridium-based novel Heusler alloys

Paudel, Ramesh ; KC, Santosh ; Adhikari, Sudeep ; Zhu, JingChuan ; Ahmad, Sohail ; Chandra Kaphle, Gopi ; Paudyal, Durga

Journal of magnetism and magnetic materials, 2022-08, Vol.555, p.169405, Article 169405 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Unconventional excitonic states with phonon sidebands in layered silicon diphosphide
Unconventional excitonic states with phonon sidebands in layered silicon diphosphide
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Unconventional excitonic states with phonon sidebands in layered silicon diphosphide

Zhou, Ling ; Huang, Junwei ; Windgaetter, Lukas ; Ong, Chin Shen ; Zhao, Xiaoxu ; Zhang, Caorong ; Tang, Ming ; Li, Zeya ; Qiu, Caiyu ; Latini, Simone ; Lu, Yangfan ; Wu, Di ; Gou, Huiyang ; Wee, Andrew T. S. ; Hosono, Hideo ; Louie, Steven G. ; Tang, Peizhe ; Rubio, Angel ; Yuan, Hongtao

Nature materials, 2022-07, Vol.21 (7), p.773-778 [Periódico revisado por pares]

London: Nature Publishing Group

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8
Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels
Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels
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Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels

Sen, Raja ; Vast, Nathalie ; Sjakste, Jelena

Proceedings of SPIE, the international society for optical engineering, 2022, Vol.12132

SPIE, The International Society for Optical Engineering

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9
Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational modes
Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational modes
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Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational modes

Talwar, Devki N. ; Lin, Hao-Hsiung

Materials science & engineering. B, Solid-state materials for advanced technology, 2022-05, Vol.279, p.115658, Article 115658 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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10
Ubiquitous Topological States of Phonons in Solids: Silicon as a Model Material
Ubiquitous Topological States of Phonons in Solids: Silicon as a Model Material
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Ubiquitous Topological States of Phonons in Solids: Silicon as a Model Material

Liu, Yizhou ; Zou, Nianlong ; Zhao, Sibo ; Chen, Xiaobin ; Xu, Yong ; Duan, Wenhui

Nano letters, 2022-03, Vol.22 (5), p.2120-2126 [Periódico revisado por pares]

United States: American Chemical Society

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