Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Vertical GaN devices: Process and reliabilityYou, Shuzhen ; Geens, Karen ; Borga, Matteo ; Liang, Hu ; Hahn, Herwig ; Fahle, Dirk ; Heuken, Michael ; Mukherjee, Kalparupa ; De Santi, Carlo ; Meneghini, Matteo ; Zanoni, Enrico ; Berg, Martin ; Ramvall, Peter ; Kumar, Ashutosh ; Björk, Mikael T. ; Ohlsson, B. Jonas ; Decoutere, StefaanMicroelectronics and reliability, 2021-11, Vol.126, p.114218, Article 114218 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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SRAM With Buried Power Distribution to Improve Write Margin and Performance in Advanced Technology NodesSalahuddin, Shairfe M. ; Shaik, Khaja A. ; Gupta, Anshul ; Chava, Bharani ; Gupta, Mohit ; Weckx, Pieter ; Ryckaert, Julien ; Spessot, AlessioIEEE electron device letters, 2019-08, Vol.40 (8), p.1261-1264 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Improved Air Spacer for Highly Scaled CMOS TechnologyCheng, Kangguo ; Park, Chanro ; Wu, Heng ; Li, Juntao ; Nguyen, Son ; Zhang, Jingyun ; Wang, Miaomiao ; Mehta, Sanjay ; Liu, Zuoguang ; Conti, Richard ; Loubet, Nicolas J. ; Frougier, Julien ; Greene, Andrew ; Yamashita, Tenko ; Haran, Balasubramanian ; Divakaruni, RamaIEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5355-5361 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire TransistorsYijiao Wang ; Al-Ameri, Talib ; Xingsheng Wang ; Georgiev, Vihar P. ; Towie, Ewan ; Amoroso, Salvatore Maria ; Brown, Andrew R. ; Cheng, Binjie ; Reid, David ; Riddet, Craig ; Shifren, Lucian ; Sinha, Saurabh ; Yeric, Greg ; Aitken, Robert ; Xiaoyan Liu ; Jinfeng Kang ; Asenov, AsenIEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3229-3236 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Modeling of failure probability and statistical design of SRAM array for yield enhancement in nanoscaled CMOSMukhopadhyay, S. ; Mahmoodi, H. ; Roy, K.IEEE transactions on computer-aided design of integrated circuits and systems, 2005-12, Vol.24 (12), p.1859-1880 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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3-D nFPGA: A Reconfigurable Architecture for 3-D CMOS/Nanomaterial Hybrid Digital CircuitsChen Dong ; Deming Chen ; Haruehanroengra, S. ; Wei WangIEEE transactions on circuits and systems. I, Regular papers, 2007-11, Vol.54 (11), p.2489-2501 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per CellLe, Binh Q. ; Grossi, Alessandro ; Vianello, Elisa ; Wu, Tony ; Lama, Giusy ; Beigne, Edith ; Wong, H.-S. Philip ; Mitra, SubhasishIEEE transactions on electron devices, 2019-01, Vol.66 (1), p.641-646 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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The Complementary FET (CFET) 6T-SRAMGupta, Mohit Kumar ; Weckx, Pieter ; Schuddinck, Pieter ; Jang, Doyoung ; Chehab, Bilal ; Cosemans, Stefan ; Ryckaert, Julien ; Dehaene, WimIEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6106-6111 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Variations in Nanometer CMOS Flip-Flops: Part II-Energy Variability and Impact of Other Sources of VariationsAlioto, Massimo ; Consoli, Elio ; Palumbo, GaetanoIEEE transactions on circuits and systems. I, Regular papers, 2015-03, Vol.62 (3), p.835-843 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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McPAT: an integrated power, area, and timing modeling framework for multicore and manycore architecturesLi, Sheng ; Ahn, Jung ; Strong, Richard ; Brockman, Jay ; Tullsen, Dean ; Jouppi, Norman2009 42nd Annual IEEE/ACM International Symposium on Microarchitecture (MICRO), 2009, p.469-480ACMTexto completo disponível |