Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 1) Textured CoPt/Ag films and nanocomposites: the effect of Ag underlayersManios, E. ; Karanasos, V. ; Niarchos, D. ; Panagiotopoulos, I.Journal of magnetism and magnetic materials, 2004-05, Vol.272, p.2169-2170 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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0. 1--10-keV x-ray-induced electron emissions from solids: Models and secondary electron measurementsHenke, B.L. ; Smith, J.A. ; Attwood, D.T.J. Appl. Phys.; (United States), 1977-05, Vol.48:5United StatesSem texto completo |
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3 |
Material Type: Artigo
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0. 1-/mu/m gate-length superconducting FETNishino, T. ; Hatano, M. ; Hasegawa, H. ; Murai, F. ; Kure, T. ; Hiraiwa, A. ; Yagi, K. ; Kawabe, U.IEEE Electron Device Lett.; (United States), 1989-02, Vol.10:2United StatesSem texto completo |
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4 |
Material Type: Artigo
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[001]-oriented crystalline Potassium-Sodium Niobate thin film fabricated at low temperature for use in piezoelectric energy harvesterKim, Jong-Hyun ; Woo, Jong-Un ; Yee, Yeon-Jeong ; Kim, In-Su ; Shin, Ho-Sung ; Hwang, Hyun-Gyu ; Kweon, Sang Hyo ; Choi, Hyun-Ju ; Nahm, SahnApplied surface science, 2021-01, Vol.537, p.147871, Article 147871 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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6 |
Material Type: Ata de Congresso
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0.12 micron logic process using a 248 nm step-and-scan systemBAKER, Dan ; ZHENG, Tammy ; TAKEMOTO, Cliff ; SETHI, Satyendra ; GABRIEL, Calvin ; SCOTT, GregSPIE proceedings series, 2000, p.294-304Bellingham WA: SPIETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin ; Lin, Chia-Hui ; Lin, Hua Tai ; Hsieh, Hung-Chang ; Yu, Shinn Sheng ; Yen, AnthonySPIE 2000Texto completo disponível |
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8 |
Material Type: Ata de Congresso
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0.18-μm optical lithography performances using an alternating DUV phase-shift maskTrouiller, Yorick ; Buffet, N ; Mourier, Thierry ; Schiavone, Patrick ; Quere, YvesSPIE proceedings series, 1998, Vol.3334, p.25-35Bellingham WA: SPIETexto completo disponível |
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9 |
Material Type: Artigo
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0.25 μm trilevel lithography using KTI 747 negative resist for the planarizing layerKUNG, E. H ; TIMKO, A. GJournal of the Electrochemical Society, 1990-11, Vol.137 (11), p.3568-3573 [Periódico revisado por pares]Pennington, NJ: Electrochemical SocietyTexto completo disponível |
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10 |
Material Type: Artigo
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0.3-10.0 THz spectra for chosen liquid crystal molecules - simulation and physical propertiesParka, Janusz ; Sielezin, KarolMolecular Crystals and Liquid Crystals, 2017-11, Vol.657 (1), p.66-71 [Periódico revisado por pares]Philadelphia: Taylor & FrancisTexto completo disponível |