Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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InP HBT Technologies for THz Integrated CircuitsUrteaga, Miguel ; Griffith, Zach ; Seo, Munkyo ; Hacker, Jonathan ; Rodwell, Mark J. W.Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1051-1067 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode DevicesGuo, Zilu ; Wang, Wenjuan ; Li, Yangjun ; Qu, Huidan ; Fan, Liuyan ; Chen, Xiren ; Zhu, Yicheng ; Gu, Yue ; Wang, Yajie ; Zheng, Changlin ; Chen, Pingping ; Lu, WeiIEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4944-4949 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Experimental Detection on Thickness Fluctuation of InxGa1-xAs-Based Indium-Rich Cluster StructureKong, Yanting ; Ma, Rong ; Shen, Bin ; Yu, QingnanIEEE photonics journal, 2022-01, Vol.14 (6), p.1-7 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off TechniquesKim, Seong Kwang ; Shim, Jae-Phil ; Geum, Dae-Myeong ; Kim, Chang Zoo ; Kim, Han-Sung ; Song, Jin Dong ; Choi, Sung-Jin ; Kim, Dae Hwan ; Choi, Won Jun ; Kim, Hyung-Jun ; Kim, Dong Myong ; Kim, SanghyeonIEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3601-3608 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Dark Current Random Telegraph Signals in Short-Wavelength Infrared Image Sensors Based on InGaAsVirmontois, C. ; Belloir, J.-M. ; Pistre, L. ; Patier, L. ; Gilard, O. ; Bardoux, A. ; Goiffon, V. ; Reverchon, J.-L. ; Colin, T. ; Berdin, E. ; Saint-Pe, O.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.770-776 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Electric Field Enhanced Generation Current in Proton Irradiated InGaAs PhotodiodesBenfante, M. ; Reverchon, J.-L. ; Gilard, O. ; Demiguel, S. ; Virmontois, C. ; Durnez, C. ; Dartois, T. ; Goiffon, V.IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Hybrid Plasmonic Ring-Resonator Uni-Traveling Carrier Pin-Photodetector on InGaAsP/InP Layer StackRostami-Khomami, Ali ; Nikoufard, MahmoudIEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3221-3228 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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InGaAs Quantum-Dot Mode-Locked Laser DiodesThompson, M.G. ; Rae, A.R. ; Mo Xia ; Penty, R.V. ; White, I.H.IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.661-672 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche DiodeTosi, Alberto ; Calandri, Niccolo ; Sanzaro, Mirko ; Acerbi, FabioIEEE journal of selected topics in quantum electronics, 2014-11, Vol.20 (6), p.192-197 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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High-Power High-Speed MUTC Waveguide Photodiodes Integrated on Si3N4/Si Platform Using Micro-Transfer PrintingYu, Fengxin ; Tzu, Ta-Ching ; Gao, Junyi ; Fatema, Tasneem ; Sun, Keye ; Singaraju, Prerana ; Bowers, Steven M. ; Reyes, Christopher ; Beling, AndreasIEEE journal of selected topics in quantum electronics, 2023-05, Vol.29 (3: Photon. Elec. Co-Inte. and Adv. Trans. Print.), p.1-6 [Periódico revisado por pares]New York: IEEETexto completo disponível |