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Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaN
Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaN
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Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaN

Wei, Wei ; Qin, ZhiXin ; Zhao, Sheng ; Liu, Fang ; Fan, ShunFei ; Zheng, JiaXin ; Zhang, GuoYi

Materials science in semiconductor processing, 2012-10, Vol.15 (5), p.578-581 [Periódico revisado por pares]

Kidlington: Elsevier Ltd

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2
Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes
Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes
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Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes

Tian, PengFei ; Sun, YongJian ; Chen, ZhiZhong ; Qi, ShengLi ; Deng, JunJing ; Yu, TongJun ; Qin, ZhiXin ; Zhang, GuoYi

Science China Technological Sciences, 2010-02, Vol.53 (2), p.301-305 [Periódico revisado por pares]

Heidelberg: SP Science in China Press

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3
Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction
Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction
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Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction

Qi, ShengLi ; Chen, ZhiZhong ; Sun, YongJian ; Fang, Hao ; Tao, YueBin ; Sang, LiWen ; Tian, PengFei ; Deng, JunJing ; Zhao, LuBing ; Yu, TongJun ; Qin, ZhiXin ; Zhang, GuoYi

Science China Technological Sciences, 2010-03, Vol.53 (3), p.769-771 [Periódico revisado por pares]

Heidelberg: SP Science China Press

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4
Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs
Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs
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Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs

Tian, Pengfei ; Chen, Zhizhong ; Sun, Yongjian ; Qi, Shengli ; Zhang, Huizhen ; Deng, Junjing ; Yu, Feng ; Yu, Tongjun ; Kang, Xiangning ; Qin, Zhixin ; Zhang, Guoyi

Materials science & engineering. B, Solid-state materials for advanced technology, 2010-12, Vol.175 (3), p.213-216 [Periódico revisado por pares]

Elsevier B.V

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5
GaN-based substrates and optoelectronic materials and devices
GaN-based substrates and optoelectronic materials and devices
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GaN-based substrates and optoelectronic materials and devices

Zhang, Guoyi ; Shen, Bo ; Chen, Zhizhong ; Hu, Xiaodong ; Qin, Zhixin ; Wang, Xinqiang ; Wu, Jiejun ; Yu, Tongjun ; Kang, Xiangning ; Fu, Xingxing ; Yang, Wei ; Yang, Zhijian ; Gan, Zhizhao

Chinese science bulletin, 2014-04, Vol.59 (12), p.1201-1218

Heidelberg: Springer-Verlag

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