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First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
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First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power

Ture, E. ; Bruckner, P. ; Alsharef, M. ; Granzner, R. ; Schwierz, F. ; Quay, R. ; Ambacher, O.

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017, p.35-37

IEEE

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2
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
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Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design

Ture, E. ; Bruckner, P. ; Raay, F. V. ; Quay, R. ; Ambacher, O. ; Alsharef, M. ; Granzner, R. ; Schwierz, F.

2015 10th European Microwave Integrated Circuits Conference (EuMIC), 2015, p.97-100

EuMA

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3
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
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Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length

Ture, E. ; Bruckner, P. ; Quay, R. ; Ambacher, O. ; Alsharef, M. ; Granzner, R. ; Schwierz, F.

2016 11th European Microwave Integrated Circuits Conference (EuMIC), 2016, p.61-64

European Microwave Association

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4
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
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Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length

Ture, E ; Brueckner, P ; Quay, R ; Ambacher, O ; Alsharef, M ; Granzner, R ; Schwierz, F

2016

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5
Performance of tri-gate AlGaN/GaN HEMTs
Performance of tri-gate AlGaN/GaN HEMTs
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Performance of tri-gate AlGaN/GaN HEMTs

Alsharef, M ; Granzner, R ; Schwierz, F ; Ture, E ; Quay, R ; Ambacher, O

2016

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6
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design

Ture, E ; Brückner, P ; Raay, F. van ; Quay, R ; Ambacher, O ; Alsharef, M ; Granzner, R ; Schwierz, F

2015

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7
The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures
The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures
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The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures

Racko, J. ; Mikolasek, M. ; Granzner, R. ; Al Mustafa, N. ; Schwierz, F. ; Breza, J.

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012, p.207-210

IEEE

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