Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing CircuitsOhbayashi, S. ; Yabuuchi, M. ; Nii, K. ; Tsukamoto, Y. ; Imaoka, S. ; Oda, Y. ; Yoshihara, T. ; Igarashi, M. ; Takeuchi, M. ; Kawashima, H. ; Yamaguchi, Y. ; Tsukamoto, K. ; Inuishi, M. ; Makino, H. ; Ishibashi, K. ; Shinohara, H.IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.820-829 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Synchronous Ultra-High-Density 2RW Dual-Port 8T-SRAM With Circumvention of Simultaneous Common-Row-AccessNii, K. ; Tsukamoto, Y. ; Yabuuchi, M. ; Masuda, Y. ; Imaoka, S. ; Usui, K. ; Ohbayashi, S. ; Makino, H. ; Shinohara, H.IEEE journal of solid-state circuits, 2009-03, Vol.44 (3), p.977-986 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature VariationsNii, K. ; Yabuuchi, M. ; Tsukamoto, Y. ; Ohbayashi, S. ; Imaoka, S. ; Makino, H. ; Yamagami, Y. ; Ishikura, S. ; Terano, T. ; Oashi, T. ; Hashimoto, K. ; Sebe, A. ; Okazaki, S. ; Satomi, K. ; Akamatsu, H. ; Shinohara, H.IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.180-191 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access IssuesIshikura, S. ; Kurumada, M. ; Terano, T. ; Yamagami, Y. ; Kotani, N. ; Satomi, K. ; Nii, K. ; Yabuuchi, M. ; Tsukamoto, Y. ; Ohbayashi, S. ; Oashi, T. ; Makino, H. ; Shinohara, H. ; Akamatsu, H.IEEE journal of solid-state circuits, 2008-04, Vol.43 (4), p.938-945 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Utilising the normal distribution of the write noise margin to easily predict the SRAM write yieldMAKINO, H ; NAKATA, S ; SUZUKI, H ; MUTOH, S ; MIYAMA, M ; YOSHIMURA, T ; IWADE, S ; MATSUDA, YIET circuits, devices & systems, 2012-07, Vol.6 (4), p.260-270 [Periódico revisado por pares]Stevenage: Institution of Engineering and TechnologySem texto completo |
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6 |
Material Type: Artigo
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Analysis of Pull-in Range Limit by Charge Pump Mismatch in a Linear Phase-Locked LoopYoshimura, T. ; Iwade, S. ; Makino, H. ; Matsuda, Y.IEEE transactions on circuits and systems. I, Regular papers, 2013-04, Vol.60 (4), p.896-907 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the DistributionMakino, H ; Nakata, S ; Suzuki, H ; Mutoh, S ; Miyama, M ; Yoshimura, T ; Iwade, S ; Matsuda, YIEEE transactions on circuits and systems. II, Express briefs, 2011-04, Vol.58 (4), p.230-234 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Ata de Congresso
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Instantaneous current profiling control for minimizing torque ripple in switched reluctance servo motorMakino, H. ; Nagata, S. ; Kosaka, T. ; Matsui, N.2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015, p.3941-3948IEEETexto completo disponível |
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9 |
Material Type: Artigo
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General Stability of Stepwise Waveform of an Adiabatic Charge Recycling Circuit With Any Circuit TopologyNakata, S. ; Honda, R. ; Makino, H. ; Mutoh, S. ; Miyama, M. ; Matsuda, Y.IEEE transactions on circuits and systems. I, Regular papers, 2012-10, Vol.59 (10), p.2301-2314 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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PWM-based instantaneous current profile tracknig control for torque ripple suppression in switched reluctance servomotorsMakino, H. ; Kosaka, T. ; Matsui, N. ; Hirayama, M. ; Ohto, M.2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013, p.1055-1060IEEETexto completo disponível |