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Refinado por: assunto: Electron Mobility

Result Number	Material Type	Add to My Shelf Action	Record Details and Options
1	Material Type: Artigo		Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors Li, Huijie ; Liu, Guipeng ; Wei, Hongyuan ; Jiao, Chunmei ; Wang, Jianxia ; Zhang, Heng ; Dong Jin, Dong ; Feng, Yuxia ; Yang, Shaoyan ; Wang, Lianshan ; Zhu, Qinsheng ; Wang, Zhan-Guo Applied physics letters, 2013-12, Vol.103 (23) [Periódico revisado por pares] Melville: American Institute of Physics Texto completo disponível Exibir Online Detalhes Resenhas & Tags Mais Opções Nº de Citações Citações Citado por
2	$A Theoretical Calculation of the Impact of GaN Cap and \hbox\hbox\hbox Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a \hbox/\hbox\hbox\hbox Heterostructure$ $A Theoretical Calculation of the Impact of GaN Cap and \hbox\hbox\hbox Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a \hbox/\hbox\hbox\hbox Heterostructure$ Material Type: Artigo		A Theoretical Calculation of the Impact of GaN Cap and \hbox\hbox\hbox Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a \hbox/\hbox\hbox\hbox Heterostructure Liu, Guipeng ; Wu, Ju ; Lu, Yanwu ; Zhang, Biao ; Li, Chengming ; Sang, Ling ; Song, Yafeng ; Shi, Kai ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4272-4275 [Periódico revisado por pares] IEEE Texto completo disponível Exibir Online Detalhes Resenhas & Tags Mais Opções Nº de Citações Citações Citado por