Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Report
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Tunable High Brightness Semiconductor SourcesBedford, Robert ; Husaini, Saima ; Reyner, Charles ; Dang, Tuoc2015Texto completo disponível |
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2 |
Material Type: Report
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Formation of Compound Semiconductors by Electrochemical Atomic Layer Epitaxy (ECALE)Suggs, D W ; Villegas, Ignacio ; Gregory, Brian W ; Stickney, John L1992Texto completo disponível |
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3 |
Material Type: Report
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Nanoworkbench for Analysis, Manipulation, and Excitation of Individual NanostructuresYates, John T , Jr ; Ahner, Joachim2001Texto completo disponível |
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4 |
Material Type: Report
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Pseudomorphic Narrow Gap Materials for High Performance DevicesWang, Wen I1990Texto completo disponível |
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5 |
Material Type: Report
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Auger Characterization of New and Aged Dispenser Cathode SurfacesEng,G ; Kan,H K A ; Luey,K T1984Texto completo disponível |
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6 |
Material Type: Report
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Single Crystal Epitaxial Germanium Based Ohmic Contact Structure for III-V and Nanoelectronic and Mesoscopic DevicesDubey, Madan ; Jones, Kenneth A ; Casas, Luis M ; Eckart, Donald W ; Pfeffer, Robert L1996Texto completo disponível |
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7 |
Material Type: Report
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8 |
Material Type: Report
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Tribology of Co-sputtered Nanocomposite Au/MoS2 Solid Lubricant Films Over a Wide Contact Stress RangeLince, J R2005Texto completo disponível |
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9 |
Material Type: Report
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Pseudomorphic Narrow Gap Materials for High Performance DevicesWang, Wen I1993Texto completo disponível |
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10 |
Material Type: Report
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Coupling Between Barrier and Quantum Well Energy States in a Multiple Quantum Well Optical AmplifierTessler, N ; Nagar, R ; Eisentein, G ; Koren, U ; Raybon, G1992Texto completo disponível |