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Self-organization during growth of ZrN/SiNx multilayers by epitaxial lateral overgrowth
Self-organization during growth of ZrN/SiNx multilayers by epitaxial lateral overgrowth
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Self-organization during growth of ZrN/SiNx multilayers by epitaxial lateral overgrowth

Fallqvist, A. ; Ghafoor, N. ; Fager, H. ; Hultman, L. ; Persson, P. O. Å.

Journal of applied physics, 2013-12, Vol.114 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films
The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films
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The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films

Beckers, M ; Höglund, C ; Baehtz, C ; Martins, R M. S ; Persson, P O. Å ; Hultman, L ; Möller, W

Journal of applied physics, 2009-09, Vol.106 (6), p.064915-064915-7 [Periódico revisado por pares]

United States: American Institute of Physics

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3
Single-crystal growth of NaCl-structure Al–Cr–N thin films on MgO(0 0 1) by magnetron sputter epitaxy
Single-crystal growth of NaCl-structure Al–Cr–N thin films on MgO(0 0 1) by magnetron sputter epitaxy
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Single-crystal growth of NaCl-structure Al–Cr–N thin films on MgO(0 0 1) by magnetron sputter epitaxy

Willmann, H. ; Beckers, M. ; Giuliani, F. ; Birch, J. ; Mayrhofer, P.H. ; Mitterer, C. ; Hultman, L.

Scripta materialia, 2007-12, Vol.57 (12), p.1089-1092 [Periódico revisado por pares]

Elsevier Ltd

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4
Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth
Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth
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Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth

Fallqvist, A. ; Fager, H. ; Hultman, L. ; Persson, P. O. Å. ; Ghafoor, N.

Journal of applied physics, 2013-12, Vol.114 (22) [Periódico revisado por pares]

United States

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5
Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
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Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

Junaid, M. ; Hsiao, C.-L. ; Palisaitis, J. ; Jensen, J. ; Persson, P. O. A. ; Hultman, L. ; Birch, J.

Applied physics letters, 2011-04, Vol.98 (14) [Periódico revisado por pares]

United States

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6
Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target
Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target
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Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target

Joelsson, T. ; Flink, A. ; Birch, J. ; Hultman, L.

Journal of applied physics, 2007-10, Vol.102 (7) [Periódico revisado por pares]

United States

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7
Epitaxial V{sub 0.6}W{sub 0.4}N/MgO(001): Evidence for ordering on the cation sublattice
Epitaxial V{sub 0.6}W{sub 0.4}N/MgO(001): Evidence for ordering on the cation sublattice
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Epitaxial V{sub 0.6}W{sub 0.4}N/MgO(001): Evidence for ordering on the cation sublattice

Kindlund, H. ; Lu, J. ; Jensen, J. ; Hultman, L. ; Petrov, I. ; Greene, J. E. ; Department of Materials Science and the Fredrick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-07, Vol.31 (4) [Periódico revisado por pares]

United States

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8
Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition
Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition
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Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition

Seppaenen, T. ; Persson, P.O.A. ; Hultman, L. ; Birch, J. ; Radnoczi, G.Z. ; Research Institute for Technical Physics and Materials Science

Journal of applied physics, 2005-04, Vol.97 (8) [Periódico revisado por pares]

United States

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9
Growth of epitaxial TiN thin films on Si(100) by reactive magnetron sputtering
Growth of epitaxial TiN thin films on Si(100) by reactive magnetron sputtering
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Growth of epitaxial TiN thin films on Si(100) by reactive magnetron sputtering

Choi, C.H. ; Hultman, L. ; Chiou, W.A. ; Barnett, S.A.

Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol.9:2

United States

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10
Radio frequency dual magnetron sputtering deposition and characterization of nanocomposite Al{sub 2}O{sub 3}-ZrO{sub 2} thin films
Radio frequency dual magnetron sputtering deposition and characterization of nanocomposite Al{sub 2}O{sub 3}-ZrO{sub 2} thin films
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Radio frequency dual magnetron sputtering deposition and characterization of nanocomposite Al{sub 2}O{sub 3}-ZrO{sub 2} thin films

Trinh, D.H. ; Hoegberg, H. ; Andersson, J.M. ; Collin, M. ; Reineck, I. ; Helmersson, U. ; Hultman, L. ; Department of Physics, Chemistry and Biology ; Sandvik Tooling, SE-126 80 Stockholm ; Department of Physics, Chemistry, and Biology ; Department of Physics, Chemistry, and Biology

Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, 2006-03, Vol.24 (2)

United States

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