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Refinado por: assunto: Condensed Matter remover
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1
Nonreversible Transition from the Hexagonal to Wurtzite Phase of Boron Nitride under High Pressure: Optical Properties of the Wurtzite Phase
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Nonreversible Transition from the Hexagonal to Wurtzite Phase of Boron Nitride under High Pressure: Optical Properties of the Wurtzite Phase

Segura, A ; Cuscó, R ; Taniguchi, T ; Watanabe, K ; Cassabois, G ; Gil, B ; Artús, L

Journal of physical chemistry. C, 2019-08, Vol.123 (33), p.20167-20173 [Periódico revisado por pares]

American Chemical Society

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2
Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells
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Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells

Morhain, Christian ; Bretagnon, Thierry ; Lefebvre, Pierre ; Tang, X ; Valvin, Pierre ; Guillet, Thierry ; Gil, Bernard ; Taliercio, Thierry ; Teisseire-Doninelli, M ; Vinter, B. ; Deparis, Christiane

Physical review. B, Condensed matter and materials physics, 2005-12, Vol.72 (24) [Periódico revisado por pares]

American Physical Society

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3
Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule
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Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

Quayle, Paul C. ; Blanton, Eric W. ; Punya, Atchara ; Junno, Grant T. ; He, Keliang ; Han, Lu ; Zhao, Hongping ; Shan, Jie ; Lambrecht, Walter R. L. ; Kash, Kathleen

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 205207 [Periódico revisado por pares]

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4
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
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Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy

Dursap, T ; Vettori, M ; Botella, C ; Regreny, P ; Blanchard, N ; Gendry, M ; Chauvin, N ; Bugnet, M ; Danescu, A ; Penuelas, J

Nanotechnology, 2021-04, Vol.32 (15), p.155602-155602 [Periódico revisado por pares]

England: IOP Publishing

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5
Room temperature ferromagnetism in Zn1―xCoxS thin films with wurtzite structure
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Room temperature ferromagnetism in Zn1―xCoxS thin films with wurtzite structure

PATEL, Shiv P ; PIVIN, J. C ; CHAWLA, A. K ; CHANDRA, Ramesh ; KANJILAL, D ; KUMAR, Lokendra

Journal of magnetism and magnetic materials, 2011-11, Vol.323 (22), p.2734-2740 [Periódico revisado por pares]

Amsterdam: Elsevier

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6
Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots
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Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots

Callsen, G. ; Pahn, Gerald M. O. ; Kalinowski, S. ; Kindel, C. ; Settke, J. ; Brunnmeier, J. ; Nenstiel, C. ; Kure, T. ; Nippert, F. ; Schliwa, A. ; Hoffmann, A. ; Markurt, T. ; Schulz, T. ; Albrecht, M. ; Kako, S. ; Arita, M. ; Arakawa, Y.

Physical review. B, Condensed matter and materials physics, 2015-12, Vol.92 (23), Article 235439 [Periódico revisado por pares]

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7
Microstructure of nanocomposite wurtzite-spinel (Fe:ZnO)-(Zn:Fe3O4) epitaxial films
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Microstructure of nanocomposite wurtzite-spinel (Fe:ZnO)-(Zn:Fe3O4) epitaxial films

Portier, X. ; Hebert, C. ; Briand, E. ; Perrière, J. ; Millon, E. ; Cachoncinlle, C. ; Nistor, M. ; Jedrecy, N.

Materials chemistry and physics, 2019-05, Vol.229, p.130-138 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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8
Large piezoelectric response of quarternary wurtzite nitride alloys and its physical origin from first principles
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Large piezoelectric response of quarternary wurtzite nitride alloys and its physical origin from first principles

Tholander, C. ; Tasnádi, F. ; Abrikosov, I. A. ; Hultman, L. ; Birch, J. ; Alling, B.

Physical review. B, Condensed matter and materials physics, 2015-11, Vol.92 (17), p.174119, Article 174119 [Periódico revisado por pares]

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9
Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
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Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Jacopin, G. ; Rigutti, L. ; Largeau, L. ; Fortuna, F. ; Furtmayr, F. ; Julien, F. H. ; Eickhoff, M. ; Tchernycheva, M.

Journal of applied physics, 2011-09, Vol.110 (6), p.064313-064313-5 [Periódico revisado por pares]

American Institute of Physics

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10
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
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Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Vainorius, Neimantas ; Jacobsson, Daniel ; Lehmann, Sebastian ; Gustafsson, Anders ; Dick, Kimberly A. ; Samuelson, Lars ; Pistol, Mats-Erik

Physical review. B, Condensed matter and materials physics, 2014-04, Vol.89 (16), Article 165423 [Periódico revisado por pares]

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