Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Nanosecond Peak Detect and Hold Circuit With Adjustable Dynamic RangeFellner, Gabriel ; Speckbacher, Lucas ; Mousavi, Seyed Mostafa ; Pommerenke, David Johannes ; Shinde, Satyajeet ; Hillstrom, Michael ; Chundru, Ram ; Lam, Cheung-WeiIEEE transactions on instrumentation and measurement, 2023, Vol.72, p.1-8 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
2 |
Material Type: Artigo
|
An Investigation of Process Variations and Mismatch Characteristics of Vertical Bipolar Junction TransistorsLiu, Xiaonian ; Yang, ZichenIEEE access, 2023-01, Vol.11, p.1-1 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
|
3 |
Material Type: Livro
|
Analysis of Bipolar and CMOS AmplifiersSodagar, Amir MUnited States: CRC Press 2018Sem texto completo |
|
4 |
Material Type: Artigo
|
Predicting the Performance of a 26 GHz Transconductance Modulated Downconversion Mixer as a Function of LO Drive and DC BiasBall, Edward A.Electronics (Basel), 2022-08, Vol.11 (16), p.2516 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
|
5 |
Material Type: Artigo
|
A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulationSchroter, M. ; Lehmann, S. ; Fregonese, S. ; Zimmer, T.IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.279-286 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
6 |
Material Type: Artigo
|
Investigating Student Understanding of Bipolar Junction Transistor CircuitsVan De Bogart, Kevin L ; Stetzer, MacKenzie RPhysical review. Physics education research, 2018-11, Vol.14 (2), p.020121, Article 020121 [Periódico revisado por pares]College Park: American Physical SocietyTexto completo disponível |
|
7 |
Material Type: Artigo
|
Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structuresPease, R.L. ; Platteter, D.G. ; Dunham, G.W. ; Seiler, J.E. ; Barnaby, H.J. ; Schrimpf, R.D. ; Shaneyfelt, M.R. ; Maher, M.C. ; Nowlin, R.N.IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3773-3780 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
8 |
Material Type: Artigo
|
A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuitsRickelt, M. ; Rein, H.-M.IEEE journal of solid-state circuits, 2002-09, Vol.37 (9), p.1184-1197 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
9 |
Material Type: Artigo
|
DC Operating Point Analysis of Transistor Circuits Using the Variable-Gain Homotopy MethodYAMAMURA, Kiyotaka ; MIYAMOTO, TakuyaIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, 2014/05/01, Vol.E97.A(5), pp.1042-1050 [Periódico revisado por pares]The Institute of Electronics, Information and Communication EngineersTexto completo disponível |
|
10 |
Material Type: Artigo
|
Heuristic for learning common emitter amplification with bipolar transistorsStaffas, KjellEuropean journal of engineering education, 2017-11, Vol.42 (6), p.860-874 [Periódico revisado por pares]Abingdon: Taylor & FrancisTexto completo disponível |