Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substratesDe Los Santos Valladares, L. ; Salinas, D. Hurtado ; Dominguez, A. Bustamante ; Najarro, D. Acosta ; Khondaker, S.I. ; Mitrelias, T. ; Barnes, C.H.W. ; Aguiar, J. Albino ; Majima, Y.Thin solid films, 2012-08, Vol.520 (20), p.6368-6374 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copperFigueiredo, V. ; Elangovan, E. ; Gonçalves, G. ; Barquinha, P. ; Pereira, L. ; Franco, N. ; Alves, E. ; Martins, R. ; Fortunato, E.Applied surface science, 2008-04, Vol.254 (13), p.3949-3954 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Thin film metallic glasses: Unique properties and potential applicationsChu, Jinn P. ; Jang, J.S.C. ; Huang, J.C. ; Chou, H.S. ; Yang, Y. ; Ye, J.C. ; Wang, Y.C. ; Lee, J.W. ; Liu, F.X. ; Liaw, P.K. ; Chen, Y.C. ; Lee, C.M. ; Li, C.L. ; Rullyani, CutThin solid films, 2012-06, Vol.520 (16), p.5097-5122 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Heterojunction Annealing Enabling Record Open‐Circuit Voltage in Antimony Triselenide Solar CellsTang, Rong ; Chen, Shuo ; Zheng, Zhuang‐Hao ; Su, Zheng‐Hua ; Luo, Jing‐Ting ; Fan, Ping ; Zhang, Xiang‐Hua ; Tang, Jiang ; Liang, Guang‐XingAdvanced materials (Weinheim), 2022-04, Vol.34 (14), p.e2109078-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
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5 |
Material Type: Artigo
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High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer depositionLee, Jongchan ; Moon, Jaehyun ; Pi, Jae-Eun ; Ahn, Seong-Deok ; Oh, Himchan ; Kang, Seung-Youl ; Kwon, Kwang-HoApplied physics letters, 2018-09, Vol.113 (11), p.112102 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistorsHwang, Sooyeon ; Lee, Ju Ho ; Woo, Chang Ho ; Lee, Jeong Yong ; Cho, Hyung KounThin solid films, 2011-05, Vol.519 (15), p.5146-5149 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistorsHanyu, Yuichiro ; Domen, Kay ; Nomura, Kenji ; Hiramatsu, Hidenori ; Kumomi, Hideya ; Hosono, Hideo ; Kamiya, ToshioApplied physics letters, 2013-11, Vol.103 (20) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin filmsYurchuk, Ekaterina ; Müller, Johannes ; Knebel, Steve ; Sundqvist, Jonas ; Graham, Andrew P. ; Melde, Thomas ; Schröder, Uwe ; Mikolajick, ThomasThin solid films, 2013-04, Vol.533, p.88-92 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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α-Cu2Se thermoelectric thin films prepared by copper sputtering into selenium precursor layersFan, Ping ; Huang, Xiao-lan ; Chen, Tian-bao ; Li, Fu ; Chen, Yue-xing ; Jabar, Bushra ; Chen, Shuo ; Ma, Hong-li ; Liang, Guang-xing ; Luo, Jing-ting ; Zhang, Xiang-hua ; Zheng, Zhuang-haoChemical engineering journal (Lausanne, Switzerland : 1996), 2021-04, Vol.410, p.128444, Article 128444 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Influence of grain size on the band-gap of annealed SnS thin filmsJain, Priyal ; Arun, P.Thin solid films, 2013-12, Vol.548, p.241-246 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |