Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Effects of temperature gradient in the growth of Si0.5Ge0.5 crystals by the traveling liquidus-zone method on board the International Space StationKinoshita, K. ; Arai, Y. ; Inatomi, Y. ; Tsukada, T. ; Miyata, H. ; Tanaka, R.Journal of crystal growth, 2016-12, Vol.455, p.49-54 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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SiGe crystal growth aboard the international space stationKinoshita, K. ; Arai, Y. ; Tsukada, T. ; Inatomi, Y. ; Miyata, H. ; Tanaka, R.Journal of crystal growth, 2015-05, Vol.417, p.31-36 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Growth of a Si0.50Ge0.50 crystal by the traveling liquidus-zone (TLZ) method in microgravityKinoshita, K. ; Arai, Y. ; Inatomi, Y. ; Tsukada, T. ; Adachi, S. ; Miyata, H. ; Tanaka, R. ; Yoshikawa, J. ; Kihara, T. ; Tomioka, H. ; Shibayama, H. ; Kubota, Y. ; Warashina, Y. ; Sasaki, Y. ; Ishizuka, Y. ; Harada, Y. ; Wada, S. ; Harada, C. ; Ito, T. ; Takayanagi, M. ; Yoda, S.Journal of crystal growth, 2014-02, Vol.388, p.12-16 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Si0.5Ge0.5 bulk single crystals with uniform compositionKinoshita, K. ; Miyata, H. ; Tanaka, R. ; Ueda, T. ; Arai, Y. ; Yoda, S.Journal of crystal growth, 2012-06, Vol.349 (1), p.50-54 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone methodKinoshita, K. ; Hanaue, Y. ; Nakamura, H. ; Yoda, S. ; Iwai, M. ; Tsuru, T. ; Muramatsu, Y.Journal of crystal growth, 2002-04, Vol.237-239, p.1859-1863 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Investigation of polycrystallization mechanism at initial interfaces in InxGa1-xAs bulk crystals on lattice mismatched seedsMIYAT, H ; ADACHI, S ; OGATA, Y ; TSURU, T ; MURAMATSU, Y ; KINOSHITA, K ; ODAWARA, O ; YODA, SJournal of crystal growth, 2006-07, Vol.292 (2), p.286-289 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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7 |
Material Type: Artigo
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Compositional uniformity of a Si0.5Ge0.5 crystal grown on board the International Space StationKinoshita, K. ; Arai, Y. ; Inatomi, Y. ; Tsukada, T. ; Miyata, H. ; Tanaka, R. ; Yoshikawa, J. ; Kihara, T. ; Tomioka, H. ; Shibayama, H. ; Kubota, Y. ; Warashina, Y. ; Ishizuka, Y. ; Harada, Y. ; Wada, S. ; Ito, T. ; Nagai, N. ; Abe, K. ; Sumioka, S. ; Takayanagi, M. ; Yoda, S.Journal of crystal growth, 2015-06, Vol.419, p.47-51 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Investigation of polycrystallization mechanism at initial interfaces in In x Ga 1− x As bulk crystals on lattice mismatched seedsMiyata, H. ; Adachi, S. ; Ogata, Y. ; Tsuru, T. ; Muramatsu, Y. ; Kinoshita, K. ; Odawara, O. ; Yoda, S.Journal of crystal growth, 2006, Vol.292 (2), p.286-289 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Growth of homogeneous mixed crystals of In 0.3Ga 0.7As by the traveling liquidus-zone methodKinoshita, K. ; Hanaue, Y. ; Nakamura, H. ; Yoda, S. ; Iwai, M. ; Tsuru, T. ; Muramatsu, Y.Journal of crystal growth, 2002, Vol.237, p.1859-1863 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |