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1
Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) Substrates
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Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) Substrates

Jones, Kenneth A ; Ciani, Anthony J ; Batyrev, Iskander ; Chung, Peter W Army Research Lab Adelphi MD Sensors And Electron Devices Directorate (Corporate Author)

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2
III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance
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III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance

Stroscio, Michael A ; Dutta, Mitra Illinois Univ At Chicago Circle Dept Of Electrical Engineering And Computer Science (Corporate Author)

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3
Phonons in Wurtzite (GaN) mu(AIN) nu Superlattices: Non-Monotoneous Dependence of the Number of Raman-Active Modes on Superlattice Period
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Phonons in Wurtzite (GaN) mu(AIN) nu Superlattices: Non-Monotoneous Dependence of the Number of Raman-Active Modes on Superlattice Period

Kitaev, Y E ; Limonov, M F ; Tronc, P Russian Academy Of Sciences Saint Petersburg Ioffe Physical-Technical Inst (Corporate Author)

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4
Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy
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Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy

Glaser, E R ; Murthy, M ; Freitas, Jr, J A ; Storm, D F ; Zhou, L ; Smith, D J Naval Research Lab Washington DC (Corporate Author)

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5
Tunable Thermal Response of ZnO Nanowires
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Tunable Thermal Response of ZnO Nanowires

Kulkarni, A J ; Zhou, M Georgia Inst Of Tech Atlanta School Of Mechanical Engineering (Corporate Author)

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6
Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions
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Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

Ram-Mohan, L R Worcester Polytechnic Inst MA (Corporate Author)

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7
Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia
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Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia

Jacobs, R N ; Salamamca-Riba, L ; He, M ; Harris, G L ; Zhou, P Maryland Univ College Park Dept Of Materials And Nuclear Engineering (Corporate Author)

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8
Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications
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Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications

Wraback, M ; Garrett, G A ; Metcalfe, G D ; Shen, H ; Schmidt, M C ; Hirai, A ; Speck, J S ; Denbaars, S P ; Nakamura, S Army Research Lab Adelphi MD Sensors And Electron Devices Directorate (Corporate Author)

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9
Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials
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Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials

Dutta, Mitra North Carolina State Univ At Raleigh (Corporate Author)

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10
Properties of Epitaxial GaN on Refractory Metal Substrates
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Properties of Epitaxial GaN on Refractory Metal Substrates

Freitas, Jr, Jaime A ; Rowland, Larry B ; Kim, Jihyun ; Fatemi, Mohammad Naval Research Lab Washington DC (Corporate Author)

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