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Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN
Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN
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Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN

Li, Zhen ; Yadav, Satyesh ; Chen, Youxing ; Li, Nan ; Liu, Xiang-Yang ; Wang, Jian ; Zhang, Shixiong ; Baldwin, Jon Kevin ; Misra, Amit ; Mara, Nathan

Materials Research Letters, 2017, Vol.5 (6), p.426-432

Taylor & Francis

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2
Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications
Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications
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Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications

Wraback, M ; Garrett, G A ; Metcalfe, G D ; Shen, H ; Schmidt, M C ; Hirai, A ; Speck, J S ; DenBaars, S P ; Nakamura, S

2008

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3
Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) Substrates
Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) Substrates
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Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) Substrates

Jones, Kenneth A ; Ciani, Anthony J ; Batyrev, Iskander ; Chung, Peter W

2011

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4
Tunable Thermal Response of ZnO Nanowires
Tunable Thermal Response of ZnO Nanowires
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Tunable Thermal Response of ZnO Nanowires

Kulkarni, A J ; Zhou, M

2007

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5
III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance
III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance
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III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance

Stroscio, Michael A ; Dutta, Mitra

2009

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6
Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions
Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions
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Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

Ram-Mohan, L R

2006

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7
Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging
Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging
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Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging

Wraback, Michael ; Chern, Grace D ; Readinger, Eric D ; Shen, Paul H ; Koblmueller, Gregor ; Gallinat, Chad S ; Speck, James S ; Schaff, William J

2006

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8
Properties of Epitaxial GaN on Refractory Metal Substrates
Properties of Epitaxial GaN on Refractory Metal Substrates
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Properties of Epitaxial GaN on Refractory Metal Substrates

Freitas, Jr, Jaime A ; Rowland, Larry B ; Kim, Jihyun ; Fatemi, Mohammad

2007

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9
Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy
Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy
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Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy

Glaser, E R ; Murthy, M ; Freitas, Jr, J A ; Storm, D F ; Zhou, L ; Smith, D J

2007

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10
Self-Assembled ZnO Nanostructure by One Step Emulsion Combustion Synthesis
Self-Assembled ZnO Nanostructure by One Step Emulsion Combustion Synthesis
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Self-Assembled ZnO Nanostructure by One Step Emulsion Combustion Synthesis

kim, Ki Hyeon

2020

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