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Study of a Large CaF2(Eu) Scintillating Bolometer for Neutrinoless Double Beta Decay
Study of a Large CaF2(Eu) Scintillating Bolometer for Neutrinoless Double Beta Decay
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Study of a Large CaF2(Eu) Scintillating Bolometer for Neutrinoless Double Beta Decay

Li, X ; Kwon, D H ; Tetsuno, K ; Kim, I ; Kim, H L ; Lee, H J ; Yoshida, S ; Kim, Y H ; Lee, M K ; Umehara, S ; Kishimoto, T

Journal of physics. Conference series, 2020, Vol.1468 (1) [Periódico revisado por pares]

IOP Publishing

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2
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
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Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

Jo, H. -B. ; Lee, I.-G. ; Baek, J. -M. ; Lee, S. T. ; Choi, S. -M. ; Kim, H.-J. ; Jeong, H. -S. ; Park, W.-S. ; Yoo, J. -H. ; Lee, H.-Y. ; Yun, D. Y. ; Son, SW ; Ko, D.-H. ; Kim, T.-W. ; Kwon, H. -M. ; Kim, S.-K. ; Kim, J. G. ; Yun, J. ; Kim, T. ; Lee, J H. ; Lee, J.-H. ; Shin, C. -S. ; Seo, K. -S. ; Kim, D. -H.

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.397-398

IEEE

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3
DESIGNING A FOSS4G-BASED WALKABLE LIVING AREA PLANNING SUPPORT MODULE TO ASSISTS THE KOREAN 15-MINUTE CITY
DESIGNING A FOSS4G-BASED WALKABLE LIVING AREA PLANNING SUPPORT MODULE TO ASSISTS THE KOREAN 15-MINUTE CITY
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DESIGNING A FOSS4G-BASED WALKABLE LIVING AREA PLANNING SUPPORT MODULE TO ASSISTS THE KOREAN 15-MINUTE CITY

Choi, J. Y. ; Choi, S. B. ; Lee, J. H. ; Kim, T. H. ; Im, W. S.

International archives of the photogrammetry, remote sensing and spatial information sciences., 2023, Vol.XLVIII-4/W7-2023, p.19-24 [Periódico revisado por pares]

Gottingen: Copernicus GmbH

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4
3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications
3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications
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3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications

Bae, Geumjong ; Bae, D.-I. ; Kang, M. ; Hwang, S.M. ; Kim, S.S. ; Seo, B. ; Kwon, T.Y. ; Lee, T.J. ; Moon, C. ; Choi, Y.M. ; Oikawa, K. ; Masuoka, S. ; Chun, K.Y. ; Park, S.H. ; Shin, H.J. ; Kim, J.C. ; Bhuwalka, K.K. ; Kim, D.H. ; Kim, W.J. ; Yoo, J. ; Jeon, H.Y. ; Yang, M.S. ; Chung, S.-J. ; Kim, D. ; Ham, B.H. ; Park, K.J. ; Kim, W.D. ; Park, S.H. ; Song, G. ; Kim, Y.H. ; Kang, M.S. ; Hwang, K.H. ; Park, C.-H. ; Lee, J.-H. ; Kim, D.-W. ; Jung, S-M. ; Kang, H.K.

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.28.7.1-28.7.4

IEEE

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5
Investigation of microcantilever array with ordered nanoporous coatings for selective chemical detection
Investigation of microcantilever array with ordered nanoporous coatings for selective chemical detection
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Investigation of microcantilever array with ordered nanoporous coatings for selective chemical detection

Lee, J.-H ; Houk, R. T. J ; Robinson, A ; Greathouse, J. A ; Thornberg, S. M ; Allendorf, M. D ; Hesketh, P. J

Proceedings of SPIE, the International Society for Optical Engineering, 2010, Vol.7679, p.767927-767927-10

Bellingham, Wash: SPIE

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6
Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs
Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs
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Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs

Grill, A. ; Stampfer, B. ; Waltl, M. ; Ki-Sik Im ; Lee, J.-H ; Ostermaier, C. ; Ceric, H. ; Grasser, T.

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.3B-5.1-3B-5.5

IEEE

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7
A Novel Method for the Growth of Cu2O/ZnO Heterojunctions
A Novel Method for the Growth of Cu2O/ZnO Heterojunctions
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A Novel Method for the Growth of Cu2O/ZnO Heterojunctions

Sakellis, I. ; Giamini, S. ; Moschos, I. ; Chandrinou, C. ; Travlos, A. ; Kim, C.-Y. ; Lee, J.-H. ; Kim, J.-G. ; Boukos, N.

Energy procedia, 2014, Vol.60, p.37-42 [Periódico revisado por pares]

Elsevier Ltd

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8
Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM
Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM
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Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM

Sato, H. ; Shin, H. M. ; Jung, H. ; Lee, S. W. ; Bae, H. ; Kwon, H. ; Ryu, K. H. ; Lim, W. C. ; Han, Y. S. ; Jeong, J. H. ; Lee, J. M ; Kim, D. S. ; Lee, K. ; Lee, J. H. ; Park, J. H. ; Song, Y. J. ; Ji, Y. ; Seo, B. I. ; Kim, J.W. ; Kim, H. H.

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-5

IEEE

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9
Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications
Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications
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Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications

Daewon Ha ; Yang, C. ; Lee, J. ; Lee, S. ; Lee, S. H. ; Seo, K.-I ; Oh, H. S. ; Hwang, E. C. ; Do, S. W. ; Park, S. C. ; Sun, M.-C ; Kim, D. H. ; Lee, J. H. ; Kang, M. I. ; Ha, S.-S ; Choi, D. Y. ; Jun, H. ; Shin, H. J. ; Kim, Y. J. ; Moon, C. W. ; Cho, Y. W. ; Park, S. H. ; Son, Y. ; Park, J. Y. ; Lee, B. C. ; Kim, C. ; Oh, Y. M. ; Park, J. S. ; Kim, S. S. ; Kim, M. C. ; Hwang, K. H. ; Nam, S. W. ; Maeda, S. ; Kim, D.-W ; Lee, J.-H ; Liang, M. S. ; Jung, E. S.

2017 Symposium on VLSI Technology, 2017, p.T68-T69

JSAP

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10
Enhancing Fullchip ILT Mask Synthesis Capability for IC Manufacturability
Enhancing Fullchip ILT Mask Synthesis Capability for IC Manufacturability
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Enhancing Fullchip ILT Mask Synthesis Capability for IC Manufacturability

CECIL, Thomas ; ASHTON, Chris ; SIM, W. J ; HONG, M. J ; JUNG, S. G ; SUH, S. S ; LEE, S. W ; IRBY, David ; LAN LUAN ; SON, D. H ; GUANGMING XIAO ; XIN ZHOU ; KIM, David ; GLEASON, Bob ; LEE, H. J

Proceedings of SPIE, the International Society for Optical Engineering, 2011, Vol.7973

Bellingham WA: SPIE

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