Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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Stereoscopic filming for investigating evasive side-stepping and anterior cruciate ligament injury riskLEE, Marcus J. C ; BOURKE, Paul ; ALDERSON, Jacqueline A ; LLOYD, David G ; LAY, BrendanProceedings of SPIE, the International Society for Optical Engineering, 2010, Vol.7524Bellingham, Wash: SPIETexto completo disponível |
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2 |
Material Type: Ata de Congresso
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Enhanced TE/TM electro-optic effect in vertically coupled InGaAs quantum dotsChuang, K Y ; Kuo, C Y ; Tzeng, T E ; Feng, David J Y ; Lay, T S2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4IEEETexto completo disponível |
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3 |
Material Type: Ata de Congresso
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Broadband quantum dots-in-a-well solar cellsChang, C. H. ; Tzeng, T. E. ; Lay, T. S. ; Cho, H. ; Feng, D. J. Y.2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.000778-000780IEEETexto completo disponível |
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4 |
Material Type: Ata de Congresso
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Performance upgrades in the EUV engineering test standTichenor, Daniel A ; Replogle, William C ; Lee, Sang Hun ; Ballard, William P ; Leung, Alvin H ; Kubiak, Glenn D ; Klebanoff, Leonard E ; Graham, Samual ; Goldsmith, John E. M ; Jefferson, Karen L ; Wronosky, John B ; Smith, Tony G ; Johnson, Terry A ; Shields, Harry ; Hale, Layton C ; Chapman, Henry N ; Taylor, John S ; Sweeney, Donald W ; Folta, James A ; Sommargren, Gary E ; Goldberg, Kenneth A ; Naulleau, Patrick P ; Attwood, David T ; Gullikson, Eric MSPIE proceedings series, 2002, Vol.4688, p.72-86Bellingham WA: SPIETexto completo disponível |
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5 |
Material Type: Ata de Congresso
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Wide Emission Spectra from Multi-stack InGaAs Quantum DotsTzeng, T.E. ; Feng, D.J.Y. ; Lay, T.S. ; Chang, T.Y.2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.194-196IEEETexto completo disponível |
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6 |
Material Type: Ata de Congresso
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Differential absorption spectroscopy for vertically coupled InGaAs quantum dots of p-type modulation dopingChuang, K.Y. ; Feng, D.J. ; Chen, C.Y. ; Tzeng, T.E. ; Lay, T.S.2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-3IEEETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching ProcessFeng, D.J.Y. ; Chiu, C.L. ; Chen, J.D. ; Lai, C.M. ; Lay, T.S. ; Chang, T.Y.2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.211-214IEEETexto completo disponível |
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8 |
Material Type: Ata de Congresso
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Structural and Optical Characteristics of Strain-mediated InGaAs Quantum DotsChen, C.Y. ; Feng, D.J. ; Tzeng, T.E. ; Lay, T.S. ; Chang, T.Y.2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.186-189IEEETexto completo disponível |
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9 |
Material Type: Ata de Congresso
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Emission and absorption polarization in InGaAs multiple quantum dots layers of different spacer layer thicknessChuang, K.Y. ; Chen, C.Y. ; Tzeng, T.E. ; Feng, D.J. ; Lay, T.S. ; Chang, T.Y.2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.190-193IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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Surface morphology and photoluminescence for InAs quantum dots of different growth temperature and capping layerTzeng, T.E. ; Feng, D.J. ; Chen, C.Y. ; Lay, T.S. ; Chang, T.Y.2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2006, p.294-296IEEETexto completo disponível |