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Refinado por: tipo de recurso: Anais de Congresso remover
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1
Paving the way to high-quality Indium Nitride -The effects of pressurized reactor
Paving the way to high-quality Indium Nitride -The effects of pressurized reactor
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Ata de Congresso 		Adicionar ao Meu Espaço

Paving the way to high-quality Indium Nitride -The effects of pressurized reactor

MATSUOKA, Takashi ; YUHUAI LIU ; KIMURA, Takeshi ; YUANTAO ZHANG ; PRASERTSUK, Kiattiwut ; KATAYAMA, Ryuji

Proceedings of SPIE, the International Society for Optical Engineering, 2011, Vol.7945

Bellingham WA: SPIE

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2
Optical properties of the periodic polarity-inverted GaN waveguides
Optical properties of the periodic polarity-inverted GaN waveguides
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Optical properties of the periodic polarity-inverted GaN waveguides

Katayama, Ryuji ; Fukuhara, Yujiro ; Kakuda, Masahiro ; Kuboya, Shigeyuki ; Onabe, Kentaro ; Kurokawa, Syusai ; Fujii, Naoto ; Matsuoka, Takashi

Proceedings of SPIE, the international society for optical engineering, 2012, Vol.8268

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3
Progress in MOVPE-growth of InGaN and InN
Progress in MOVPE-growth of InGaN and InN
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Progress in MOVPE-growth of InGaN and InN

Matsuoka, Takashi

SPIE 2008

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4
Progress in MOVPE-Growth of GaN to InN
Progress in MOVPE-Growth of GaN to InN
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Progress in MOVPE-Growth of GaN to InN

MATSUOKA, Takashi

Proceedings of SPIE, the International Society for Optical Engineering, 2008, p.69000S.1-69000S.6

Bellingham, Wash: SPIE

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5
History of Blue LED Consisted of Nitride Semiconductors
History of Blue LED Consisted of Nitride Semiconductors
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History of Blue LED Consisted of Nitride Semiconductors

Matsuoka, Takashi

2017 IEEE HISTory of ELectrotechnolgy CONference (HISTELCON), 2017, p.121-126

IEEE

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6
New possibility of MOVPE-growth in GaN and InN: polarization in GaN and nitrogen-incorporation in InN
New possibility of MOVPE-growth in GaN and InN: polarization in GaN and nitrogen-incorporation in InN
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New possibility of MOVPE-growth in GaN and InN: polarization in GaN and nitrogen-incorporation in InN

Matsuoka, Takashi

Proceedings of SPIE, the International Society for Optical Engineering, 2007, Vol.6473, p.647302-647302-12

Bellingham WA: SPIE

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7
Nitride semiconductors for blue lasers (Invited Paper)
Nitride semiconductors for blue lasers (Invited Paper)
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Nitride semiconductors for blue lasers (Invited Paper)

Matsuoka, Takashi

SPIE 2005

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8
Nitride-semiconductor technologies for blue lasers
Nitride-semiconductor technologies for blue lasers
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Nitride-semiconductor technologies for blue lasers

MATSUOKA, Takashi

Proceedings of SPIE, the International Society for Optical Engineering, 2005, p.60500K.1-60500K.9

Bellingham (Wash.): SPIE

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9
Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction
Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction
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Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction

Liu, Yu Huai ; Wang, Fang ; Zhang, Wei ; Yang, Shou Yi ; Zhang, Yuan Tao ; Katayama, Ryuji ; Matsuoka, Takashi

Applied Mechanics and Materials, 2013, Vol.341-342, p.204 [Periódico revisado por pares]

Zurich: Trans Tech Publications Ltd

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10
History of Distributed Feedback Laser
History of Distributed Feedback Laser
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

History of Distributed Feedback Laser

Matsuoka, Takashi ; Iwashita, Katsushi

2017 IEEE HISTory of ELectrotechnolgy CONference (HISTELCON), 2017, p.127-132

IEEE

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