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Refinado por: tipo de recurso: Anais de Congresso remover
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1
An Improved Technology for Elevated Source/Drain MOSFETS
An Improved Technology for Elevated Source/Drain MOSFETS
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Ata de Congresso 		Adicionar ao Meu Espaço

An Improved Technology for Elevated Source/Drain MOSFETS

Waite, A.M. ; Howard, D.J. ; Kubicek, S. ; Caymax, M. ; De Meyer, K. ; Evans, A.G.R.

27th European Solid-State Device Research Conference, 1997, p.256-259

Editions Frontieres

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2
In situ TEM studies of the effect of misfit strain on the kinetics of Si{sub 1-x}Ge{sub x} solid phase epitaxy: Temperature calibration and surface effects
In situ TEM studies of the effect of misfit strain on the kinetics of Si{sub 1-x}Ge{sub x} solid phase epitaxy: Temperature calibration and surface effects
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

In situ TEM studies of the effect of misfit strain on the kinetics of Si{sub 1-x}Ge{sub x} solid phase epitaxy: Temperature calibration and surface effects

Paine, D.C. ; Howard, D.J. ; Evans, N.

United States 1992

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3
In situ TEM studies of the effect of misfit strain on the kinetics of Si sub 1-x Ge sub x solid phase epitaxy: Temperature calibration and surface effects
In situ TEM studies of the effect of misfit strain on the kinetics of Si sub 1-x Ge sub x solid phase epitaxy: Temperature calibration and surface effects
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In situ TEM studies of the effect of misfit strain on the kinetics of Si sub 1-x Ge sub x solid phase epitaxy: Temperature calibration and surface effects

Paine, D.C. ; Howard, D.J. ; Evans, N.

United States 1992

Sem texto completo

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4
Experimental validation of mechanical stress models by micro-raman spectroscopy
Experimental validation of mechanical stress models by micro-raman spectroscopy
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Experimental validation of mechanical stress models by micro-raman spectroscopy

de Wolf, I. ; Pozzat, G. ; Pinardl, K. ; Howard, D.J. ; Ignat, M. ; Jain, S.C. ; Maes, H.E.

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 1996, p.1751-1754

IEEE

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5
In situ TEM studies of the growth of strained Si sub 1 minus x Ge sub x by solid phase epitaxy
In situ TEM studies of the growth of strained Si sub 1 minus x Ge sub x by solid phase epitaxy
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

In situ TEM studies of the growth of strained Si sub 1 minus x Ge sub x by solid phase epitaxy

Paine, D.C. ; Howard, D.J. ; Evans, N.D. ; Greve, D.W. ; Racanelli, M. ; Stoffel, N.G.

United States 1990

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6
A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy
A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy
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A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

De Wolf, I. ; Howard, D.J. ; Rasras, M. ; Lauwers, A. ; Maex, K. ; Groeseneken, G. ; Maes, H.E.

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173), 1998, p.124-128

IEEE

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