skip to main content
Idioma:
Primo Advanced Search
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search prefilters
Busca Simples
Refinado por: Nome da Publicação: Semiconductor Science and Technology remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors
Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors

Yao, Weizhen ; Wang, Lianshan ; Li, Fangzheng ; Meng, Yulin ; Yang, Shaoyan ; Wang, Zhanguo

Semiconductor science and technology, 2019-12, Vol.34 (12), p.125006 [Periódico revisado por pares]

IOP Publishing

Texto completo disponível

Citações Citado por
2
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1−xN GaN heterostructures
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1−xN GaN heterostructures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1−xN GaN heterostructures

Feng, Yuxia ; Liu, Guipeng ; Yang, Shaoyan ; Wei, Hongyuan ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Semiconductor science and technology, 2014-04, Vol.29 (4) [Periódico revisado por pares]

IOP Publishing

Texto completo disponível

Citações Citado por
3
Interface roughness scattering considering the electrical field fluctuation in undoped Al x Ga 1− x N/GaN heterostructures
Interface roughness scattering considering the electrical field fluctuation in undoped Al x Ga 1− x N/GaN heterostructures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Interface roughness scattering considering the electrical field fluctuation in undoped Al x Ga 1− x N/GaN heterostructures

Feng, Yuxia ; Liu, Guipeng ; Yang, Shaoyan ; Wei, Hongyuan ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45015 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.