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Refinado por: Nome da Publicação: Scientific Reports (Nature Publisher Group) remover
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1
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
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High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

Zhang, Lisheng ; Xu, Fujun ; Wang, Jiaming ; He, Chenguang ; Guo, Weiwei ; Wang, Mingxing ; Sheng, Bowen ; Lu, Lin ; Qin, Zhixin ; Wang, Xinqiang ; Shen, Bo

Scientific reports, 2016-11, Vol.6 (1), p.35934-35934, Article 35934 [Periódico revisado por pares]

England: Nature Publishing Group

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2
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
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High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

Wang, Jiaming ; Xu, Fujun ; He, Chenguang ; Zhang, Lisheng ; Lu, Lin ; Wang, Xinqiang ; Qin, Zhixin ; Shen, Bo

Scientific reports, 2017-02, Vol.7 (1), p.42747-42747, Article 42747 [Periódico revisado por pares]

England: Nature Publishing Group

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3
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
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Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

He, Chenguang ; Qin, Zhixin ; Xu, Fujun ; Zhang, Lisheng ; Wang, Jiaming ; Hou, Mengjun ; Zhang, Shan ; Wang, Xinqiang ; Ge, Weikun ; Shen, Bo

Scientific reports, 2016-04, Vol.6 (1), p.25124-25124, Article 25124 [Periódico revisado por pares]

England: Nature Publishing Group

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4
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
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Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Ma, Dingyu ; Rong, Xin ; Zheng, Xiantong ; Wang, Weiying ; Wang, Ping ; Schulz, Tobias ; Albrecht, Martin ; Metzner, Sebastian ; Müller, Mathias ; August, Olga ; Bertram, Frank ; Christen, Jürgen ; Jin, Peng ; Li, Mo ; Zhang, Jian ; Yang, Xuelin ; Xu, Fujun ; Qin, Zhixin ; Ge, Weikun ; Shen, Bo ; Wang, Xinqiang

Scientific reports, 2017-04, Vol.7 (1), p.46420-46420, Article 46420 [Periódico revisado por pares]

England: Nature Publishing Group

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5
Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition
Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition
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Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Cheng, Jianpeng ; Yang, Xuelin ; Sang, Ling ; Guo, Lei ; Zhang, Jie ; Wang, Jiaming ; He, Chenguang ; Zhang, Lisheng ; Wang, Maojun ; Xu, Fujun ; Tang, Ning ; Qin, Zhixin ; Wang, Xinqiang ; Shen, Bo

Scientific reports, 2016-03, Vol.6 (1), p.23020-23020, Article 23020 [Periódico revisado por pares]

England: Nature Publishing Group

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6
Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers
Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers
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Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

He, Chenguang ; Qin, Zhixin ; Xu, Fujun ; Hou, Mengjun ; Zhang, Shan ; Zhang, Lisheng ; Wang, Xinqiang ; Ge, Weikun ; Shen, Bo

Scientific reports, 2015-08, Vol.5 (1), p.13046-13046, Article 13046 [Periódico revisado por pares]

England: Nature Publishing Group

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