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Refinado por: Nome da Publicação: Journal of crystal growth remover
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Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers
Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers
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Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers

Peng, Enchao ; Wang, Xiaoliang ; Xiao, Hongling ; Wang, Cuimei ; Yin, Haibo ; Chen, Hong ; Feng, Chun ; Jiang, Lijuan ; Hou, Xun ; Wang, Zhanguo

Journal of crystal growth, 2013-11, Vol.383, p.25-29 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Li, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2012-06, Vol.348 (1), p.10-14 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
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AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Wang, Xiaoliang ; Hu, Guoxin ; Ma, Zhiyong ; Ran, Junxue ; Wang, Cuimei ; Xiao, Hongling ; Tang, Jian ; Li, Jianping ; Wang, Junxi ; Zeng, Yiping ; Li, Jinmin ; Wang, Zhanguo

Journal of crystal growth, 2007, Vol.298, p.835-839 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Growth of c-oriented ZnO films on (001) SrTiO3 substrates by MOCVD
Growth of c-oriented ZnO films on (001) SrTiO3 substrates by MOCVD
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Growth of c-oriented ZnO films on (001) SrTiO3 substrates by MOCVD

Jia, Caihong ; Chen, Yonghai ; Liu, Genhua ; Liu, Xianglin ; Yang, Shaoyan ; Wang, Zhanguo

Journal of crystal growth, 2008-12, Vol.311 (1), p.200-204 [Periódico revisado por pares]

Amsterdam: Elsevier

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5
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers

Zhang, Biao ; Song, Huaping ; Wang, Jun ; Jia, Caihong ; Liu, Jianming ; Xu, Xiaoqing ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2011-03, Vol.319 (1), p.114-117 [Periódico revisado por pares]

Amsterdam: Elsevier

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6
Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation
Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation
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Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation

Zhou, Huiying ; Qu, Shengchun ; Jin, Peng ; Xu, Bo ; Ye, Xiaoling ; Liu, Junpeng ; Wang, Zhanguo

Journal of crystal growth, 2011-03, Vol.318 (1), p.572-575 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Design of the low-temperature AlN interlayer for GaN grown on Si (1 1 1) substrate
Design of the low-temperature AlN interlayer for GaN grown on Si (1 1 1) substrate
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Design of the low-temperature AlN interlayer for GaN grown on Si (1 1 1) substrate

Cong, Guangwei ; Lu, Yuan ; Peng, Wenqin ; Liu, Xianglin ; Wang, Xiaohui ; Wang, Zhanguo

Journal of crystal growth, 2005-04, Vol.276 (3), p.381-388 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
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MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

Wang, Xiaoliang ; Wang, Cuimei ; Hu, Guoxin ; Xiao, Hongling ; Fang, Cebao ; Wang, Junxi ; Ran, Junxue ; Li, Jianping ; Li, Jinmin ; Wang, Zhanguo

Journal of crystal growth, 2007, Vol.298, p.791-793 [Periódico revisado por pares]

Amsterdam: Elsevier

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9
Growth and characterization of InN on sapphire substrate by RF-MBE
Growth and characterization of InN on sapphire substrate by RF-MBE
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Growth and characterization of InN on sapphire substrate by RF-MBE

Xiao, Hongling ; Wang, Xiaoliang ; Wang, Junxi ; Zhang, Nanhong ; Liu, Hongxin ; Zeng, Yiping ; Li, Jinmin ; Wang, Zhanguo

Journal of crystal growth, 2005-04, Vol.276 (3), p.401-406 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(1 1 1) substrate
Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(1 1 1) substrate
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Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(1 1 1) substrate

Lu, Yuan ; Liu, Xianglin ; Wang, Xiaohui ; Lu, Da-Cheng ; Li, Dabing ; Han, Xiuxun ; Cong, Guangwei ; Wang, Zhanguo

Journal of crystal growth, 2004-03, Vol.263 (1-4), p.4-11 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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