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Refinado por: Nome da Publicação: Journal of Crystal Growth remover
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1
Effects of temperature gradient in the growth of Si0.5Ge0.5 crystals by the traveling liquidus-zone method on board the International Space Station
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Effects of temperature gradient in the growth of Si0.5Ge0.5 crystals by the traveling liquidus-zone method on board the International Space Station

Kinoshita, K. ; Arai, Y. ; Inatomi, Y. ; Tsukada, T. ; Miyata, H. ; Tanaka, R.

Journal of crystal growth, 2016-12, Vol.455, p.49-54 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Numerical simulations of SiGe crystal growth by the traveling liquidus-zone method in a microgravity environment
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Numerical simulations of SiGe crystal growth by the traveling liquidus-zone method in a microgravity environment

Abe, K. ; Sumioka, S. ; Sugioka, K.-I. ; Kubo, M. ; Tsukada, T. ; Kinoshita, K. ; Arai, Y. ; Inatomi, Y.

Journal of crystal growth, 2014-09, Vol.402, p.71-77 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
SiGe crystal growth aboard the international space station
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SiGe crystal growth aboard the international space station

Kinoshita, K. ; Arai, Y. ; Tsukada, T. ; Inatomi, Y. ; Miyata, H. ; Tanaka, R.

Journal of crystal growth, 2015-05, Vol.417, p.31-36 [Periódico revisado por pares]

Elsevier B.V

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4
Si0.5Ge0.5 bulk single crystals with uniform composition
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Si0.5Ge0.5 bulk single crystals with uniform composition

Kinoshita, K. ; Miyata, H. ; Tanaka, R. ; Ueda, T. ; Arai, Y. ; Yoda, S.

Journal of crystal growth, 2012-06, Vol.349 (1), p.50-54 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Growth of a Si0.50Ge0.50 crystal by the traveling liquidus-zone (TLZ) method in microgravity
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Growth of a Si0.50Ge0.50 crystal by the traveling liquidus-zone (TLZ) method in microgravity

Kinoshita, K. ; Arai, Y. ; Inatomi, Y. ; Tsukada, T. ; Adachi, S. ; Miyata, H. ; Tanaka, R. ; Yoshikawa, J. ; Kihara, T. ; Tomioka, H. ; Shibayama, H. ; Kubota, Y. ; Warashina, Y. ; Sasaki, Y. ; Ishizuka, Y. ; Harada, Y. ; Wada, S. ; Harada, C. ; Ito, T. ; Takayanagi, M. ; Yoda, S.

Journal of crystal growth, 2014-02, Vol.388, p.12-16 [Periódico revisado por pares]

Elsevier B.V

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6
MOVPE growth of high quality p-type InGaN with intermediate In compositions
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MOVPE growth of high quality p-type InGaN with intermediate In compositions

Sasamoto, K. ; Hotta, T. ; Sugita, K. ; Bhuiyan, A.G. ; Hashimoto, A. ; Yamamoto, A. ; Kinoshita, K. ; Kohji, Y.

Journal of crystal growth, 2011-03, Vol.318 (1), p.492-495 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Numerical analysis of two-dimensional model of the traveling liquidus-zone method
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Numerical analysis of two-dimensional model of the traveling liquidus-zone method

Adachi, S. ; Kinoshita, K. ; Takayanagi, M. ; Miyata, H.

Journal of crystal growth, 2011-11, Vol.334 (1), p.67-71 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method
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Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method

KINOSHITA, K ; KATO, H ; IWAI, M ; TSURU, T ; MURAMATSU, Y ; YODA, S

Journal of crystal growth, 2001-05, Vol.225 (1), p.59-66 [Periódico revisado por pares]

Amsterdam: Elsevier

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9
Homogeneous SiGe crystals grown by using the traveling liquidus-zone method
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Homogeneous SiGe crystals grown by using the traveling liquidus-zone method

Adachi, S. ; Ogata, Y. ; Koshikawa, N. ; Matsumoto, S. ; Kinoshita, K. ; Yoshizaki, I. ; Tsuru, T. ; Miyata, H. ; Takayanagi, M. ; Yoda, S.

Journal of crystal growth, 2005-07, Vol.280 (3), p.372-377 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone method
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Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone method

Kinoshita, K. ; Hanaue, Y. ; Nakamura, H. ; Yoda, S. ; Iwai, M. ; Tsuru, T. ; Muramatsu, Y.

Journal of crystal growth, 2002-04, Vol.237-239, p.1859-1863 [Periódico revisado por pares]

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