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Refinado por: Nome da Publicação: Journal of Applied Physics remover
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1
On the photoemission from quantum-confined Kane-type semiconductors
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On the photoemission from quantum-confined Kane-type semiconductors

GHATAK, K. P ; MONDAL, M

Journal of applied physics, 1991-02, Vol.69 (3), p.1666-1677 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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2
THE DIFFUSIVITY-MOBILITY RATIO IN NONPARABOLIC MATERIALS
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THE DIFFUSIVITY-MOBILITY RATIO IN NONPARABOLIC MATERIALS

GHATAK, KP ; MONDAL, M

Journal of applied physics, 1992-02, Vol.71 (3), p.1277-1283 [Periódico revisado por pares]

WOODBURY: Amer Inst Physics

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3
The thermoelectric power in 3D quantum-well structures of Kane-type semiconductors under large magnetic field
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The thermoelectric power in 3D quantum-well structures of Kane-type semiconductors under large magnetic field

GHATAK, K. P ; MONDAL, M

Journal of applied physics, 1989-10, Vol.66 (7), p.3056-3059 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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4
The Einstein relation in Kane-type semiconductors
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The Einstein relation in Kane-type semiconductors

GHATAK, K. P ; CHATTOPADHYAY, N ; MONDAL, M

Journal of applied physics, 1988-05, Vol.63 (9), p.4536-4539 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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5
On a simplified analysis of the photoemission from quaternary alloys
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On a simplified analysis of the photoemission from quaternary alloys

Ghatak, K. P. ; Mondal, M. ; Biswas, S. N.

Journal of applied physics, 1990-09, Vol.68 (6), p.3032-3034 [Periódico revisado por pares]

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6
On the gate capacitance in n-channel inversion layers on ternary semiconductors under magnetic quantization
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On the gate capacitance in n-channel inversion layers on ternary semiconductors under magnetic quantization

GHATAK, K. P ; MONDAL, M

Journal of applied physics, 1987-08, Vol.62 (3), p.922-924 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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7
Effect of surface electric field on the gate capacitance of metal-oxide-semiconductor structures of ternary semiconductors
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Effect of surface electric field on the gate capacitance of metal-oxide-semiconductor structures of ternary semiconductors

GHATAK, K. P ; MONDAL, M

Journal of applied physics, 1988-07, Vol.64 (2), p.918-921 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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8
On the thermoelectric power of the electrons in degenerate n - A II3 B V2 compounds in the presence of a classically large magnetic field
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On the thermoelectric power of the electrons in degenerate n - A II3 B V2 compounds in the presence of a classically large magnetic field

Ghatak, K. P. ; Mondal, M.

Journal of applied physics, 1989-05, Vol.65 (9), p.3480-3483 [Periódico revisado por pares]

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9
On the thermoelectric power of the electrons in degenerate n-A3IIB2V compounds in the presence of a classically large magnetic field
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On the thermoelectric power of the electrons in degenerate n-A3IIB2V compounds in the presence of a classically large magnetic field

GHATAK, K. P ; MONDAL, M

Journal of applied physics, 1989, Vol.65 (9), p.3480-3483 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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10
On a simplified of the photoemission from quaternary alloys
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On a simplified of the photoemission from quaternary alloys

GHATAK, K. P ; MONDAL, M ; BISWAS, S. N

Journal of applied physics, 1990, Vol.68 (6), p.3032-3034 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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