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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Fagerlind, M. ; Allerstam, F. ; Sveinbjörnsson, E. Ö. ; Rorsman, N. ; Kakanakova-Georgieva, A. ; Lundskog, A. ; Forsberg, U. ; Janzén, E.

Journal of applied physics, 2010-07, Vol.108 (1), p.014508 [Periódico revisado por pares]

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2
Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis
Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis
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Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

Aragon, Andrew ; Monavarian, Morteza ; Pickrell, Greg ; Crawford, Mary ; Allerman, Andrew ; Feezell, Daniel ; Armstrong, Andrew M.

Journal of applied physics, 2020-11, Vol.128 (18) [Periódico revisado por pares]

United States: American Institute of Physics (AIP)

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3
Image-driven discriminative and generative machine learning algorithms for establishing microstructure–processing relationships
Image-driven discriminative and generative machine learning algorithms for establishing microstructure–processing relationships
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Image-driven discriminative and generative machine learning algorithms for establishing microstructure–processing relationships

Ma, Wufei ; Kautz, Elizabeth J. ; Baskaran, Arun ; Chowdhury, Aritra ; Joshi, Vineet V. ; Yener, Bulent ; Lewis, Daniel J.

Journal of applied physics, 2020-10, Vol.128 (13) [Periódico revisado por pares]

United States: American Institute of Physics (AIP)

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4
Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes
Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes
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Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Mirkhosravi, F. ; Rashidi, A. ; Elshafiey, A. T. ; Gallagher, J. ; Abedi, Z. ; Ahn, K. ; Lintereur, A. ; Mace, E. K. ; Scarpulla, M. A. ; Feezell, D.

Journal of applied physics, 2023-01, Vol.133 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
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Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

Kumar, Ashutosh ; Berg, Martin ; Wang, Qin ; Uzuhashi, Jun ; Ohkubo, Tadakatsu ; Salter, Michael ; Ramvall, Peter

Journal of applied physics, 2023-07, Vol.134 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1-xInxP multilayers
Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1-xInxP multilayers
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Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1-xInxP multilayers

Tsai, Y.L ; Horng, R.H ; Liu, P.L ; Tseng, M.C ; Lin, D.Y ; Wuu, D.S

Journal of Applied Physics, 2009, Vol.106 (Journal of Applied Physics, Volume 106, Issue 6.) [Periódico revisado por pares]

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7
High current-induced degradation of AlGaN ultraviolet light emitting diodes
High current-induced degradation of AlGaN ultraviolet light emitting diodes
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High current-induced degradation of AlGaN ultraviolet light emitting diodes

Pinos, A ; Marcinkevičius, S ; Shur, M S

Journal of applied physics, 2011-05, Vol.109 (10), p.103108-103108-10 [Periódico revisado por pares]

American Institute of Physics

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8
Threshold displacement energy in GaN: Ab initio molecular dynamics study
Threshold displacement energy in GaN: Ab initio molecular dynamics study
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Threshold displacement energy in GaN: Ab initio molecular dynamics study

Xiao, H. Y. ; Gao, Fei ; Zu, X. T. ; Weber, W. J.

Journal of applied physics, 2009-06, Vol.105 (12) [Periódico revisado por pares]

United States

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9
Effect of implanted species on thermal evolution of ion-induced defects in ZnO
Effect of implanted species on thermal evolution of ion-induced defects in ZnO
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Effect of implanted species on thermal evolution of ion-induced defects in ZnO

Azarov, A. Yu ; Hallén, A. ; Du, X. L. ; Rauwel, P. ; Kuznetsov, A. Yu ; Svensson, B. G.

Journal of applied physics, 2014-02, Vol.115 (7), p.073512 [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation
Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation
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Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

Fagerlind, M. ; Rorsman, N.

Journal of applied physics, 2012-07, Vol.112 (1), p.Art. no. 014511 [Periódico revisado por pares]

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