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Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
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Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells

Chichibu, SF ; Onuma, T. ; Sota, T. ; DenBaars, S. P. ; Nakamura, S. ; Kitamura, T. ; Ishida, Y. ; Okumura, H.

Journal of applied physics, 2003-02, Vol.93 (4), p.2051-2054 [Periódico revisado por pares]

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2
Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion
Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion
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Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion

Hwang, J. I. ; Osafune, Y. ; Kobayashi, M. ; Ebata, K. ; Ooki, Y. ; Ishida, Y. ; Fujimori, A. ; Takeda, Y. ; Okane, T. ; Saitoh, Y. ; Kobayashi, K. ; Tanaka, A.

Journal of applied physics, 2007-05, Vol.101 (10), p.103709-103709-6 [Periódico revisado por pares]

American Institute of Physics

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3
Electron holography observation of in-plane domain structure in writer pole for perpendicular recording heads
Electron holography observation of in-plane domain structure in writer pole for perpendicular recording heads
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Electron holography observation of in-plane domain structure in writer pole for perpendicular recording heads

Hirata, K. ; Ishida, Y. ; Kim, J. J. ; Kasai, H. ; Shindo, D. ; Takahashi, M. ; Tonomura, A.

Journal of applied physics, 2009-04, Vol.105 (7), p.07D538-07D538-3 [Periódico revisado por pares]

American Institute of Physics

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4
Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces
Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces
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Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

Osafune, Y. ; Song, G. S. ; Hwang, J. I. ; Ishida, Y. ; Kobayashi, M. ; Ebata, K. ; Ooki, Y. ; Fujimori, A. ; Okabayashi, J. ; Kanai, K. ; Kubo, K. ; Oshima, M.

Journal of applied physics, 2008-05, Vol.103 (10), p.103717-103717-4 [Periódico revisado por pares]

American Institute of Physics

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5
Grain-Boundary Fine Structure in an Iron Alloy
Grain-Boundary Fine Structure in an Iron Alloy
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Grain-Boundary Fine Structure in an Iron Alloy

Ishida, Y. ; Hasegawa, T. ; Nagata, F.

Journal of applied physics, 1969-04, Vol.40 (5), p.2182-2186 [Periódico revisado por pares]

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6
Observation of a Bernstein wave propagating obliquely to the magnetic field in a streaming plasma
Observation of a Bernstein wave propagating obliquely to the magnetic field in a streaming plasma
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Observation of a Bernstein wave propagating obliquely to the magnetic field in a streaming plasma

Idehara, T. ; Takeda, M. ; Ishida, Y.

J. Appl. Phys., v. 45, no. 2, pp. 697-699, 1974-02, Vol.45 (2), p.697-699 [Periódico revisado por pares]

United States

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7
Failure prediction for long length optical fiber based on proof testing
Failure prediction for long length optical fiber based on proof testing
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Failure prediction for long length optical fiber based on proof testing

Mitsunaga, Yutaka ; Katsuyama, Yutaka ; Kobayashi, Hirokazu ; Ishida, Yukinori

Journal of applied physics, 1982-01, Vol.53 (7), p.4847-4853 [Periódico revisado por pares]

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8
Sputter-enhanced diffusion phenomena in Cu/Ni alloys at elevated temperatures
Sputter-enhanced diffusion phenomena in Cu/Ni alloys at elevated temperatures
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Sputter-enhanced diffusion phenomena in Cu/Ni alloys at elevated temperatures

Shimizu, Hazime ; Ono, Masatoshi ; Koyama, Naoyuki ; Ishida, Yoichi

Journal of applied physics, 1982-04, Vol.53 (4), p.3044-3052 [Periódico revisado por pares]

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9
Dynamic fatigue of optical fiber under repeated stress
Dynamic fatigue of optical fiber under repeated stress
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Dynamic fatigue of optical fiber under repeated stress

Katsuyama, Yutaka ; Mitsunaga, Yutaka ; Kobayashi, Hirokazu ; Ishida, Yukinori

Journal of applied physics, 1982-01, Vol.53 (1), p.318-321 [Periódico revisado por pares]

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10
Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals
Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals
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Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

Nakagawa, S. ; Shizu, T. ; Imai, T. ; Nakayama, M. ; Kim, J. ; Minami, H. ; Kadowaki, K. ; Tsujimoto, M. ; Nakao, H. ; Eisaki, H. ; Ishida, S. ; Mochiku, T. ; Hasegawa, Y. ; Kashiwagi, T.

Journal of applied physics, 2023-04, Vol.133 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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