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Ab initio study of Raman modes and thermodynamic properties of TinO2n−1
Ab initio study of Raman modes and thermodynamic properties of TinO2n−1
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Ab initio study of Raman modes and thermodynamic properties of TinO2n−1

Hosseini, S. Vahid ; Abbasnejad, Mohaddeseh ; Mohammadizadeh, Mohammad Reza

Journal of applied physics, 2023-05, Vol.133 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Properties of water surface discharge at different pulse repetition rates
Properties of water surface discharge at different pulse repetition rates
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Properties of water surface discharge at different pulse repetition rates

Ruma ; Hosseini, S. H. R. ; Yoshihara, K. ; Akiyama, M. ; Sakugawa, T. ; Lukeš, P. ; Akiyama, H.

Journal of applied physics, 2014-09, Vol.116 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy
Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy
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Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy

Woo, S. Y. ; Hosseini Vajargah, S. ; Ghanad-Tavakoli, S. ; Kleiman, R. N. ; Botton, G. A.

Journal of applied physics, 2012-10, Vol.112 (7) [Periódico revisado por pares]

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4
Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy
Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy
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Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

Hosseini Vajargah, S. ; Woo, S. Y. ; Ghanad-Tavakoli, S. ; Kleiman, R. N. ; Preston, J. S. ; Botton, G. A.

Journal of applied physics, 2012-11, Vol.112 (9) [Periódico revisado por pares]

United States

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5
Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy
Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy
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Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

Hosseini Vajargah, S. ; Ghanad-Tavakoli, S. ; Preston, J. S. ; Botton, G. A. ; Kleiman, R. N.

Journal of applied physics, 2012-11, Vol.112 (9) [Periódico revisado por pares]

United States

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6
Photo-detector diode based on thermally oxidized TiO2 nanostructures/p-Si heterojunction
Photo-detector diode based on thermally oxidized TiO2 nanostructures/p-Si heterojunction
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Photo-detector diode based on thermally oxidized TiO2 nanostructures/p-Si heterojunction

Hosseini, Z. S. ; Shasti, M. ; Ramezani Sani, S. ; Mortezaali, A.

Journal of applied physics, 2016-01, Vol.119 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Ab initio study of Raman modes and thermodynamic properties of Ti n O2 n −1
Ab initio study of Raman modes and thermodynamic properties of Ti n O2 n −1
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Ab initio study of Raman modes and thermodynamic properties of Ti n O2 n −1

Hosseini, S. Vahid ; Abbasnejad, Mohaddeseh ; Mohammadizadeh, Mohammad Reza

Journal of applied physics, 2023-05, Vol.133 (17) [Periódico revisado por pares]

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8
Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer
Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer
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Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah, S. Hosseini ; Ghanad-Tavakoli, S. ; Preston, J. S. ; Kleiman, R. N. ; Botton, G. A.

Journal of applied physics, 2013-09, Vol.114 (11) [Periódico revisado por pares]

United States

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9
Ytterbium-implanted photonic resonators based on thin film lithium niobate
Ytterbium-implanted photonic resonators based on thin film lithium niobate
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Ytterbium-implanted photonic resonators based on thin film lithium niobate

Pak, Dongmin ; An, Haechan ; Nandi, Arindam ; Jiang, Xiaodong ; Xuan, Yi ; Hosseini, Mahdi

Journal of applied physics, 2020-08, Vol.128 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Large signal analysis of multiple quantum well transistor laser: Investigation of imbalanced carrier and photon density distribution
Large signal analysis of multiple quantum well transistor laser: Investigation of imbalanced carrier and photon density distribution
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Large signal analysis of multiple quantum well transistor laser: Investigation of imbalanced carrier and photon density distribution

Taghavi, Iman ; Namvar, Behzad ; Hosseini, Mohammad ; Kaatuzian, Hassan

Journal of applied physics, 2020-04, Vol.127 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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