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Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal–insulator–semiconductor capacitors
Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal–insulator–semiconductor capacitors
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Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal–insulator–semiconductor capacitors

Magnus, W. ; Schoenmaker, W.

Journal of applied physics, 2000-11, Vol.88 (10), p.5833-5842 [Periódico revisado por pares]

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2
Physical modeling of strain-dependent hole mobility in Ge p -channel inversion layers
Physical modeling of strain-dependent hole mobility in Ge p -channel inversion layers
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Physical modeling of strain-dependent hole mobility in Ge p -channel inversion layers

Zhang, Y ; Fischetti, M V ; Sorée, B ; Magnus, W ; Heyns, M ; Meuris, M

Journal of applied physics, 2009-10, Vol.106 (8), p.083704-083704-9 [Periódico revisado por pares]

American Institute of Physics

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3
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
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Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Croitoru, M. D. ; Gladilin, V. N. ; Fomin, V. M. ; Devreese, J. T. ; Magnus, W. ; Schoenmaker, W. ; Sorée, B.

Journal of applied physics, 2004-08, Vol.96 (4), p.2305-2310 [Periódico revisado por pares]

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4
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor
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Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Croitoru, M. D. ; Gladilin, V. N. ; Fomin, V. M. ; Devreese, J. T. ; Magnus, W. ; Schoenmaker, W. ; Sorée, B.

Journal of applied physics, 2003-01, Vol.93 (2), p.1230-1240 [Periódico revisado por pares]

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5
Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics
Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics
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Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics

O’Regan, T. P. ; Fischetti, M. V. ; Sorée, B. ; Jin, S. ; Magnus, W. ; Meuris, M.

Journal of applied physics, 2010-11, Vol.108 (10) [Periódico revisado por pares]

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6
Trajectory deflection of spinning magnetic microparticles: The Magnus effect at the microscale
Trajectory deflection of spinning magnetic microparticles: The Magnus effect at the microscale
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Trajectory deflection of spinning magnetic microparticles: The Magnus effect at the microscale

Solsona, M. ; Keizer, H. ; de Boer, H. L. ; Klein, Y. P. ; Olthuis, W. ; Abelmann, L. ; van den Berg, A.

Journal of applied physics, 2020-05, Vol.127 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal–oxide–semiconductor structures
Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal–oxide–semiconductor structures
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Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal–oxide–semiconductor structures

Pokatilov, E. P. ; Fomin, V. M. ; Balaban, S. N. ; Gladilin, V. N. ; Klimin, S. N. ; Devreese, J. T. ; Magnus, W. ; Schoenmaker, W. ; Collaert, N. ; Van Rossum, M. ; De Meyer, K.

Journal of applied physics, 1999-05, Vol.85 (9), p.6625-6631 [Periódico revisado por pares]

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8
Calculation of the electron mobility in III-V inversion layerswith high- κ dielectrics
Calculation of the electron mobility in III-V inversion layerswith high- κ dielectrics
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Calculation of the electron mobility in III-V inversion layerswith high- κ dielectrics

O'Regan, T P ; Fischetti, M V ; Sorée, B ; Jin, S ; Magnus, W ; Meuris, M

Journal of applied physics, 2010-11, Vol.108 (10), p.103705-103705-11 [Periódico revisado por pares]

American Institute of Physics

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9
Transient enhanced diffusion of boron in Si
Transient enhanced diffusion of boron in Si
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Transient enhanced diffusion of boron in Si

Jain, S. C. ; Schoenmaker, W. ; Lindsay, R. ; Stolk, P. A. ; Decoutere, S. ; Willander, M. ; Maes, H. E.

Journal of applied physics, 2002-06, Vol.91 (11), p.8919-8941 [Periódico revisado por pares]

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10
ZERO-DIMENSIONAL STATES IN SUBMICRON DOUBLE-BARRIER HETEROSTRUCTURES LATERALLY CONSTRICTED BY HYDROGEN PLASMA ISOLATION
ZERO-DIMENSIONAL STATES IN SUBMICRON DOUBLE-BARRIER HETEROSTRUCTURES LATERALLY CONSTRICTED BY HYDROGEN PLASMA ISOLATION
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ZERO-DIMENSIONAL STATES IN SUBMICRON DOUBLE-BARRIER HETEROSTRUCTURES LATERALLY CONSTRICTED BY HYDROGEN PLASMA ISOLATION

VANHOVE, M ; PEREIRA, R ; DERAEDT, W ; BORGHS, G ; JONCKHEERE, R ; SALA, C ; MAGNUS, W ; SCHOENMAKER, W ; VANROSSUM, M

Journal of applied physics, 1992-07, Vol.72 (1), p.158-160 [Periódico revisado por pares]

MELVILLE: Amer Inst Physics

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