Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Wet etching of semi-polar (11–22) GaN on m-sapphire by different methodsWen, Ling ; Wang, Lianshan ; Chai, Ruohao ; Li, Wenlong ; Yang, ShaoyanJournal of crystal growth, 2021-09, Vol.570, p.126200, Article 126200 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowthLi, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, ZhanguoJournal of crystal growth, 2012-06, Vol.348 (1), p.10-14 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templatesLi, Huijie ; Liu, Changbo ; Liu, Guipeng ; wei, Hongyuan ; Jiao, Chunmei ; Wang, Jianxia ; Zhang, Heng ; Jin, Dong dong ; Feng, Yuxia ; Yang, Shaoyan ; Wang, Lianshan ; Zhu, Qinsheng ; Wang, Zhan-GuoJournal of crystal growth, 2014-03, Vol.389, p.1-4 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Growth of c-oriented ZnO films on (001) SrTiO3 substrates by MOCVDJia, Caihong ; Chen, Yonghai ; Liu, Genhua ; Liu, Xianglin ; Yang, Shaoyan ; Wang, ZhanguoJournal of crystal growth, 2008-12, Vol.311 (1), p.200-204 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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5 |
Material Type: Artigo
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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layersZhang, Biao ; Song, Huaping ; Wang, Jun ; Jia, Caihong ; Liu, Jianming ; Xu, Xiaoqing ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, ZhanguoJournal of crystal growth, 2011-03, Vol.319 (1), p.114-117 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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6 |
Material Type: Artigo
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Growth of c-oriented ZnO films on (001) substrates by MOCVDJia, Caihong ; Chen, Yonghai ; Liu, Genhua ; Liu, Xianglin ; Yang, Shaoyan ; Wang, ZhanguoJournal of crystal growth, 2008-12, Vol.311 (1), p.200-204 [Periódico revisado por pares]Elsevier BVTexto completo disponível |
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7 |
Material Type: Artigo
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Investigation of Mn-implanted n-Si by low-energy ion beam depositionLiu, Lifeng ; Chen, Nuofu ; Song, Shulin ; Yin, Zhigang ; Yang, Fei ; Chai, Chunlin ; Yang, Shaoyan ; Liu, ZhikaiJournal of crystal growth, 2005-01, Vol.273 (3), p.458-463 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)NZhang, Fuqiang ; Chen, NuoFu ; Liu, Xianglin ; Liu, Zhikai ; Yang, Shaoyan ; Chai, ChunlinJournal of crystal growth, 2004-02, Vol.262 (1), p.287-289 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Ga1-xMnxSb grown on GaSb with mass-analyzed low-energy dual ion beam depositionChen, Chenlong ; Chen, Nuofu ; Liu, Lifeng ; Wu, Jinliang ; Liu, Zhikai ; Yang, Shaoyan ; Chai, ChunlinJournal of crystal growth, 2005-06, Vol.279 (3-4), p.272-275 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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10 |
Material Type: Artigo
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MnSi ∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy techniqueYang, Junling ; Chen, NuoFu ; Liu, Zhikai ; Yang, Shaoyan ; Chai, Chunlin ; Liao, Meiyong ; He, HongjiaJournal of crystal growth, 2001-08, Vol.226 (4), p.517-520 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |