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Refinado por: Nome da Publicação: Journal Of Applied Physics remover
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1
ROLE OF IMPURITIES ON DIFFUSION-INDUCED DEFECTIVE STATES
ROLE OF IMPURITIES ON DIFFUSION-INDUCED DEFECTIVE STATES
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ROLE OF IMPURITIES ON DIFFUSION-INDUCED DEFECTIVE STATES

CASTALDINI, A ; CAVALLINI, A ; FRABONI, B ; GIANNOTTE, E

Journal of applied physics, 1992-12, Vol.72 (12), p.5622-5627 [Periódico revisado por pares]

WOODBURY: Amer Inst Physics

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2
Minority carrier diffusion length and edge surface-recombination velocity in InP
Minority carrier diffusion length and edge surface-recombination velocity in InP
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Minority carrier diffusion length and edge surface-recombination velocity in InP

Hakimzadeh, Roshanak ; Bailey, Sheila G.

Journal of applied physics, 1993-07, Vol.74 (2), p.1118-1123 [Periódico revisado por pares]

Legacy CDMS: American Institute of Physics

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3
Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level
Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level
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Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

Kittler, M. ; Ulhaq-Bouillet, C. ; Higgs, V.

Journal of applied physics, 1995-10, Vol.78 (7), p.4573-4583 [Periódico revisado por pares]

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4
Effects of copper and oxygen precipitation during thermal oxidation of silicon: An electron-beam-induced current study
Effects of copper and oxygen precipitation during thermal oxidation of silicon: An electron-beam-induced current study
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Effects of copper and oxygen precipitation during thermal oxidation of silicon: An electron-beam-induced current study

Correia, A. ; Ballutaud, D. ; Boutry-Forveille, A. ; Maurice, J.-L.

Journal of applied physics, 1995-12, Vol.78 (11), p.6543-6553 [Periódico revisado por pares]

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5
Deep energy levels in CdTe and CdZnTe
Deep energy levels in CdTe and CdZnTe
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Deep energy levels in CdTe and CdZnTe

Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Fernandez, P. ; Piqueras, J.

Journal of applied physics, 1998-02, Vol.83 (4), p.2121-2126 [Periódico revisado por pares]

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6
Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon
Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon
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Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon

Spiga, S. ; Castaldini, A. ; Cavallini, A. ; Polignano, M. L. ; Cazzaniga, F.

Journal of applied physics, 1999-02, Vol.85 (3), p.1395-1400 [Periódico revisado por pares]

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7
Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy
Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy
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Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy

Cavallini, A. ; Fraboni, B. ; Pizzini, S. ; Binetti, S. ; Sanguinetti, S. ; Lazzarini, L. ; Salviati, G.

Journal of applied physics, 1999-02, Vol.85 (3), p.1582-1586 [Periódico revisado por pares]

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8
Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon
Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon
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Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon

Vernon-Parry, K. D. ; Evans-Freeman, J. H. ; Hawkins, I. D. ; Dawson, P. ; Peaker, A. R.

Journal of applied physics, 2001-03, Vol.89 (5), p.2715-2719 [Periódico revisado por pares]

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9
Defects introduced in cadmium telluride by γ irradiation
Defects introduced in cadmium telluride by γ irradiation
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Defects introduced in cadmium telluride by γ irradiation

Cavallini, A. ; Fraboni, B. ; Dusi, W. ; Zanarini, M. ; Hage-Ali, M. ; Siffert, P.

Journal of applied physics, 2001-04, Vol.89 (8), p.4664-4666 [Periódico revisado por pares]

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10
Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces
Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces
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Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Lee, H. S. ; Lee, J. Y. ; Kim, T. W. ; Lee, D. U. ; Choo, D. C. ; Kim, M. D.

Journal of applied physics, 2002-05, Vol.91 (9), p.5657-5660 [Periódico revisado por pares]

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