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Refinado por: data de publicação: 1990Até2005 remover Nome da Publicação: Japanese Journal Of Applied Physics remover
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1
Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides
Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides
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Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides

Lim, Sang Woo ; Tekleab, Daniel ; Luo, Tien-Ying ; Grudowski, Paul

Japanese Journal of Applied Physics, 2005-01, Vol.44 (4L), p.L584 [Periódico revisado por pares]

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2
Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
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Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

Cho, Hag-Ju ; Lee, Hye Lan ; Park, Hong Bae ; Jeon, Taek Soo ; Park, Seong Geon ; Jin, Beom Jun ; Kang, Sang Bom ; Shin, Yu Gyun ; Chung, U-In ; Moon, Joo Tae

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2230 [Periódico revisado por pares]

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3
Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy
Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy
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Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy

Tatsumi, Tomohiko ; Fujita, Miki ; Kawamoto, Noriaki ; Sasajima, Masanori ; Horikoshi, Yoshiji

Japanese Journal of Applied Physics, 2004, Vol.43 (5R), p.2602-2606 [Periódico revisado por pares]

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4
Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
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Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering

Kim, Kyoung-Kook ; Tampo, Hitoshi ; Song, June-O ; Seong, Tae-Yeon ; Park, Seong-Ju ; Lee, Ji-Myon ; Kim, Sang-Woo ; Fujita, Shizuo ; Niki, Shigeru

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7R), p.4776 [Periódico revisado por pares]

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5
10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
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10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

Ito, Takayuki ; Iinuma, Toshihiko ; Murakoshi, Atsushi ; Akutsu, Haruko ; Suguro, Kyoichi ; Arikado, Tsunetoshi ; Okumura, Katsuya ; Yoshioka, Masaki ; Owada, Tatsushi ; Imaoka, Yasuhiro ; Murayama, Hiromi ; Kusuda, Tatsuhumi

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4B), p.2394-2398 [Periódico revisado por pares]

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6
Effect of Thermal Annealing on Morphology of Pentacene Thin Films
Effect of Thermal Annealing on Morphology of Pentacene Thin Films
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Effect of Thermal Annealing on Morphology of Pentacene Thin Films

Ye, Rongbin ; Baba, Mamoru ; Suzuki, Kazunori ; Ohishi, Yoshiyuki ; Mori, Kunio

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 7A), p.4473-4475 [Periódico revisado por pares]

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7
Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing
Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing
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Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing

Yin, You ; Sone, Hayato ; Hosaka, Sumio

Japanese Journal of Applied Physics, 2005-08, Vol.44 (8R), p.6208 [Periódico revisado por pares]

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8
Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 ×7 Dimer-Adatom-Stacking Fault Surfaces
Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 ×7 Dimer-Adatom-Stacking Fault Surfaces
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Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 ×7 Dimer-Adatom-Stacking Fault Surfaces

Uchigasaki, Makoto ; Tomiki, Kenichi ; Kamioka, Takefumi ; Nakayama, Eiji ; Watanabe, Takanobu ; Ohdomari, Iwao

Japanese Journal of Applied Physics, 2005-02, Vol.44 (2L), p.L313 [Periódico revisado por pares]

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9
CONTROLLED TEMPERATURE COEFFICIENT OF RESONANT FREQUENCY OF Al2O3-TiO2 CERAMICS BY ANNEALING TREATMENT
CONTROLLED TEMPERATURE COEFFICIENT OF RESONANT FREQUENCY OF Al2O3-TiO2 CERAMICS BY ANNEALING TREATMENT
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CONTROLLED TEMPERATURE COEFFICIENT OF RESONANT FREQUENCY OF Al2O3-TiO2 CERAMICS BY ANNEALING TREATMENT

Ohishi, Y ; Miyauchi, Y ; Ohsato, H ; Kakimoto, K

Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 6A, pp. L749-L751. 2004, 2004-01, Vol.43 (6A), p.L749-L751 [Periódico revisado por pares]

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10
Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence
Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence
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Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence

Kageyama, Takeo ; Miyamoto, Tomoyuki ; Makino, Shigeki ; Koyama, Fumio ; Iga, Kenichi

Japanese Journal of Applied Physics, 1999-03, Vol.38 (Part 2, No. 3B), p.L298-L300 [Periódico revisado por pares]

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