Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light CommunicationRashidi, Arman ; Monavarian, Morteza ; Aragon, Andrew ; Okur, Serdal ; Nami, Mohsen ; Rishinaramangalam, Ashwin ; Mishkat-Ul-Masabih, Saadat ; Feezell, DanielIEEE photonics technology letters, 2017-02, Vol.29 (4), p.381-384New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum EfficiencyKalra, Anisha ; Rathkanthiwar, Shashwat ; Muralidharan, Rangarajan ; Raghavan, Srinivasan ; Nath, Digbijoy N.IEEE photonics technology letters, 2019-08, Vol.31 (15), p.1237-1240IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN ElectrodeLiu, Chao ; Cai, Yuefei ; Zou, Xinbo ; Lau, Kei MayIEEE photonics technology letters, 2016-05, Vol.28 (10), p.1130-1133New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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The Initial Test of a Micro-Joules Trigger, Picosecond Response, Vertical GaN PCSSYang, Xianghong ; Yang, Yingxiang ; Hu, Long ; Liu, Jingliang ; Duan, Xue ; Huang, Jia ; Li, Xin ; Liu, WeihuaIEEE photonics technology letters, 2023-01, Vol.35 (2), p.69-72New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche PhotodiodesMi-Hee Ji ; Jeomoh Kim ; Detchprohm, Theeradetch ; Yuanzheng Zhu ; Shyh-Chiang Shen ; Dupuis, Russell D.IEEE photonics technology letters, 2018-01, Vol.30 (2), p.181-184New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-PhotodetectorAlkhazragi, Omar ; Kang, Chun Hong ; Kong, Meiwei ; Liu, Guangyu ; Lee, Changmin ; Li, Kuang-Hui ; Zhang, Huafan ; Wagstaff, Jonathan M. ; Alhawaj, Fatimah ; Ng, Tien Khee ; Speck, James S. ; Nakamura, Shuji ; DenBaars, Steven P. ; Ooi, Boon S.IEEE photonics technology letters, 2020-07, Vol.32 (13), p.767-770New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum WellsXing, Kun ; Xia, Zhihu ; Xie, Guangxia ; Pan, Zhengwei ; Zhuang, Zhe ; Hu, Junwei ; Sang, Yimeng ; Tao, Tao ; Yang, Xiaoping ; Liu, Bin ; Zhang, RongIEEE photonics technology letters, 2023-12, Vol.35 (24), p.1439-1442New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting DiodesYen, Sheng-Horng ; Tsai, Miao-Chan ; Tsai, Meng-Lun ; Shen, Yu-Jiun ; Hsu, Ta-Cheng ; Kuo, Yen-KuangIEEE photonics technology letters, 2009-07, Vol.21 (14), p.975-977New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Reduced Droop Effect in Nitride Light Emitting Diodes With Taper-Shaped Electron Blocking LayerLiu, Chao ; Ren, Zhiwei ; Chen, Xin ; Zhao, Bijun ; Wang, Xingfu ; Li, ShutiIEEE photonics technology letters, 2014-07, Vol.26 (13), p.1368-1371New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Measurement of Internal Polarization by QCSE Induced Level Shift in AlGaN Quantum Cascade EmittersHofstetter, Daniel ; Beck, Hans ; Kirste, Lutz ; Bour, David P.IEEE photonics technology letters, 2019-05, Vol.31 (9), p.657-660New York: IEEETexto completo disponível |