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High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates
High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates
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High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Wang, M. X. ; Xu, F. J. ; Xie, N. ; Sun, Y. H. ; Liu, B. Y. ; Ge, W. K. ; Kang, X. N. ; Qin, Z. X. ; Yang, X. L. ; Wang, X. Q. ; Shen, B.

Applied physics letters, 2019-03, Vol.114 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN
Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN
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Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN

Guo, X. Q. ; Xu, F. J. ; Lang, J. ; Wang, J. M. ; Zhang, L. S. ; Zhang, Z. Y. ; Ji, C. ; Tan, F. Y. ; Ji, C. Z. ; Wu, Y. ; Kang, X. N. ; Tang, N. ; Wang, X. Q. ; Qin, Z. X. ; Ge, W. K. ; Shen, B.

Applied physics letters, 2024-06, Vol.124 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment
Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment
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Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

Zhang, N. ; Xu, F. J. ; Lang, J. ; Wang, L. B. ; Wang, J. M. ; Liu, B. Y. ; Fang, X. Z. ; Yang, X. L. ; Kang, X. N. ; Wang, X. Q. ; Qin, Z. X. ; Ge, W. K. ; Shen, B.

Applied physics letters, 2021-05, Vol.118 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers
High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers
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High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Lang, J. ; Xu, F. J. ; Ge, W. K. ; Liu, B. Y. ; Zhang, N. ; Sun, Y. H. ; Wang, M. X. ; Xie, N. ; Fang, X. Z. ; Kang, X. N. ; Qin, Z. X. ; Yang, X. L. ; Wang, X. Q. ; Shen, B.

Applied physics letters, 2019-04, Vol.114 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission
Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission
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Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

Sun, Y. H. ; Xu, F. J. ; Xie, N. ; Wang, J. M. ; Zhang, N. ; Lang, J. ; Liu, B. Y. ; Fang, X. Z. ; Wang, L. B. ; Ge, W. K. ; Kang, X. N. ; Qin, Z. X. ; Yang, X. L. ; Wang, X. Q. ; Shen, B.

Applied physics letters, 2020-05, Vol.116 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy
Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy
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Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

Liu, F. ; Rong, X. ; Yu, Y. ; Wang, T. ; Sheng, B. W. ; Wei, J. Q. ; Liu, S. F. ; Yang, J. J. ; Bertram, F. ; Xu, F. J. ; Yang, X. L. ; Zhang, Z. H. ; Qin, Z. X. ; Zhang, Y. T. ; Shen, B. ; Wang, X. Q.

Applied physics letters, 2020-04, Vol.116 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy
Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy
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Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy

Zheng, X. T. ; Wang, T. ; Wang, P. ; Sun, X. X. ; Wang, D. ; Chen, Z. Y. ; Quach, P. ; Wang, Y. X. ; Yang, X. L. ; Xu, F. J. ; Qin, Z. X. ; Yu, T. J. ; Ge, W. K. ; Shen, B. ; Wang, X. Q.

Applied physics letters, 2020-11, Vol.117 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range
A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range
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A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range

Quach, P. ; Liu, S. F. ; Jollivet, A. ; Wang, D. ; Cheng, J. Y. ; Isac, N. ; Pirotta, S. ; Bouville, D. ; Sheng, S. S. ; Imran, A. ; Chen, L. ; Li, D. ; Zheng, X. T. ; Wang, Y. X. ; Qin, Z. X. ; Tchernycheva, M. ; Julien, F. H. ; Shen, B. ; Wang, X. Q.

Applied physics letters, 2020-04, Vol.116 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films
Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films
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Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films

Chen, Z. Y. ; Yuan, H. T. ; Wang, X. Q. ; Ma, N. ; Zhang, Y. W. ; Shimotani, H. ; Qin, Z. X. ; Shen, B. ; Iwasa, Y.

Applied physics letters, 2013-12, Vol.103 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
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Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

Chen, G. ; Li, Z. L. ; Wang, X. Q. ; Huang, C. C. ; Rong, X. ; Sang, L. W. ; Xu, F. J. ; Tang, N. ; Qin, Z. X. ; Sumiya, M. ; Chen, Y. H. ; Ge, W. K. ; Shen, B.

Applied physics letters, 2013-05, Vol.102 (19) [Periódico revisado por pares]

United States

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