Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Tuning magnetism of monolayer MoS2 by doping vacancy and applying strainZheng, Huiling ; Yang, Baishun ; Wang, Dingdi ; Han, Ruilin ; Du, Xiaobo ; Yan, YuApplied physics letters, 2014-03, Vol.104 (13) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Strain controlling transport properties of heterostructure composed of monolayer CrI3Yang, Baishun ; Zhang, Xiaolin ; Yang, Hongxin ; Han, Xiufeng ; Yan, YuApplied physics letters, 2019-05, Vol.114 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li0.5CrI3 and CrI3Li, Fangfang ; Yang, Baishun ; Zhu, Yu ; Han, Xiufeng ; Yan, YuApplied physics letters, 2020-07, Vol.117 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Large tunneling magnetoresistance and low resistance-area product in CrSe2/NiCl2/CrSe2 van der Waals magnetic tunnel junctionGuo, Xiaoyan ; Zhu, Yu ; Yang, Baishun ; Zhang, Xiaolin ; Han, Xiufeng ; Yan, YuApplied physics letters, 2022-07, Vol.121 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Interlayer coupling in intrinsically magnetic bilayer ScO2 and NbN2Guo, Xiaoyan ; Li, Fangfang ; Zhu, Yu ; Han, Xiufeng ; Yan, YuApplied physics letters, 2020-02, Vol.116 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memoryWang, Yichuan ; Yan, Yu ; Wang, Chen ; Chen, Yuting ; Li, Junye ; Zhao, Jinshi ; Hwang, Cheol SeongApplied physics letters, 2018-08, Vol.113 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Magnetic domain wall engineering in a nanoscale permalloy junctionWang, Junlin ; Zhang, Xichao ; Lu, Xianyang ; Zhang, Jason ; Yan, Yu ; Ling, Hua ; Wu, Jing ; Zhou, Yan ; Xu, YongbingApplied physics letters, 2017-08, Vol.111 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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The atomic-scale magnetism of Co2FeAl Heusler alloy epitaxial thin filmsZhang, Xiaoqian ; Liu, Wenqing ; Yan, Yu ; Niu, Wei ; Lai, Bolin ; Zhao, Yafei ; Wang, Wei ; He, Liang ; Meng, Hao ; Xu, YongbingApplied physics letters, 2018-11, Vol.113 (21) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Micro-buried spiral zone plate in a lithium niobate crystalTian, Zhen-Nan ; Hua, Jian-Guan ; Hao, Juan ; Yu, Yan-Hao ; Chen, Qi-Dai ; Sun, Hong-BoApplied physics letters, 2017-01, Vol.110 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayerLi, Zhuoyi ; Lu, Xianyang ; Zhang, Zhe ; Li, Wenjia ; Li, TaoTao ; Zhou, Jian ; Yan, Yu ; Liu, Ruobai ; Du, Jun ; Liu, Ronghua ; Wang, Xinran ; Li, Yao ; He, Liang ; Wu, Jing ; Zhang, Rong ; Xu, YongbingApplied physics letters, 2023-07, Vol.123 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |