skip to main content
Idioma:
Primo Advanced Search
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search prefilters
Busca Simples
Refinado por: Nome da Publicação: Applied Physics Letters remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

Ji, Dong ; Liu, Bing ; Lu, Yanwu ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2012-03, Vol.100 (13) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
2
Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy

Zhang, Riqing ; Zhang, Panfeng ; Kang, Tingting ; Fan, Haibo ; Liu, Xianglin ; Yang, Shaoyan ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2007-10, Vol.91 (16) [Periódico revisado por pares]

United States

Texto completo disponível

Citações Citado por
3
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Li, Huijie ; Liu, Guipeng ; Wei, Hongyuan ; Jiao, Chunmei ; Wang, Jianxia ; Zhang, Heng ; Dong Jin, Dong ; Feng, Yuxia ; Yang, Shaoyan ; Wang, Lianshan ; Zhu, Qinsheng ; Wang, Zhan-Guo

Applied physics letters, 2013-12, Vol.103 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
4
InN nanoflowers grown by metal organic chemical vapor deposition
InN nanoflowers grown by metal organic chemical vapor deposition
Material Type:
Artigo 		Adicionar ao Meu Espaço

InN nanoflowers grown by metal organic chemical vapor deposition

Kang, Ting-Ting ; Liu, Xianglin ; Zhang, Ri Q ; Hu, Wei G ; Cong, Guangwei ; Zhao, Feng-Ai ; Zhu, Qinsheng

Applied physics letters, 2006-08, Vol.89 (7), p.071113-071113-3 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
5
Dislocation scattering in AlxGa1−xN∕GaN heterostructures
Dislocation scattering in AlxGa1−xN∕GaN heterostructures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Dislocation scattering in AlxGa1−xN∕GaN heterostructures

Xu, Xiaoqing ; Liu, Xianglin ; Han, Xiuxun ; Yuan, Hairong ; Wang, Jun ; Guo, Yan ; Song, Huaping ; Zheng, Gaolin ; Wei, Hongyuan ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2008-11, Vol.93 (18) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
6
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells

Liu, Guipeng ; Wu, Ju ; Lu, Yanwu ; Zhao, Guijuan ; Gu, Chengyan ; Liu, Changbo ; Sang, Ling ; Yang, Shaoyan ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2012-04, Vol.100 (16) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
7
Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots
Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots
Material Type:
Artigo 		Adicionar ao Meu Espaço

Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots

Li, Guodong ; Jiang, Chao ; Zhu, Qinsheng ; Sakaki, Hiroyuki

Applied physics letters, 2011-01, Vol.98 (3), p.32103 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
8
Anisotropic transport of two-dimensional electron gas modulatedby embedded elongated GaSb/GaAs quantum dots
Anisotropic transport of two-dimensional electron gas modulatedby embedded elongated GaSb/GaAs quantum dots
Material Type:
Artigo 		Adicionar ao Meu Espaço

Anisotropic transport of two-dimensional electron gas modulatedby embedded elongated GaSb/GaAs quantum dots

Li, Guodong ; Jiang, Chao ; Zhu, Qinsheng ; Sakaki, Hiroyuki

Applied physics letters, 2011-01, Vol.98 (3), p.032103-032103-3 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
9
Polarization-induced remote interfacial charge scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high electron mobility transistors
Polarization-induced remote interfacial charge scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high electron mobility transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Polarization-induced remote interfacial charge scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high electron mobility transistors

Ji, Dong ; Liu, Bing ; Lu, Yanwu ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2012-03, Vol.100 (13), p.132105-132105-4 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
10
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures

Liu, Guipeng ; Wu, Ju ; Zhao, Guijuan ; Liu, Shuman ; Mao, Wei ; Hao, Yue ; Liu, Changbo ; Yang, Shaoyan ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2012-02, Vol.100 (8), p.082101-082101-4 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.