Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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1.9 THz Quantum-cascade Lasers with One-well InjectorKumar, Sushil ; Williams, Benjamin S. ; Hu, Qing ; Reno, John L.Applied physics letters, 2006-03, Vol.88 (12), p.121123-121123-3 [Periódico revisado por pares]Goddard Space Flight Center: American Inst. of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Laser action in chromium-doped forsteritePetricevic, V. ; Gayen, S. K. ; Alfano, R. R. ; Yamagishi, Kiyoshi ; Anzai, H.Appl. Phys. Lett.; (United States), 1988-03, Vol.52 (13), p.1040-1042 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Coupled-mode analysis of phase-locked injection laser arraysButler, J. K. ; Ackley, D. E. ; Botez, D.Appl. Phys. Lett.; (United States), 1984-02, Vol.44 (3), p.293-295 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Highly efficient neodymium:yttrium aluminum garnet laser end pumped by a semiconductor laser arraySipes, D. L.Appl. Phys. Lett.; (United States), 1985-07, Vol.47 (2), p.74-76 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Evaluation of the feasibility of a far-infrared laser based on intersubband transitions in GaAs quantum wellsBorenstain, Shmuel I. ; Katz, JosephAppl. Phys. Lett.; (United States), 1989-08, Vol.55 (7), p.654-656 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiencyLarsson, Anders ; Cody, Jeffrey ; Lang, Robert J.Applied physics letters, 1989-11, Vol.55 (22), p.2268-2270 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integrationLarsson, A. ; Cody, J. ; Forouhar, S. ; Lang, R. J.Applied physics letters, 1990-04, Vol.56 (18), p.1731-1733 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulatorArakawa, Y. ; Larsson, A. ; Paslaski, J. ; Yariv, A.Appl. Phys. Lett.; (United States), 1986-03, Vol.48 (9), p.561-563 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Linewidth broadening due to longitudinal spatial hole burning in a long distributed feedback laserWu, Ming-Chiang ; Lo, Yu-Hwa ; Wang, ShyhAppl. Phys. Lett.; (United States), 1988-04, Vol.52 (14), p.1119-1121 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflectorHagberg, M. ; Larsson, A. ; Eng, S. T.Applied physics letters, 1990-05, Vol.56 (20), p.1934-1936 [Periódico revisado por pares]Legacy CDMSTexto completo disponível |