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1
Iron Loss Characteristics Evaluation Using a High-Frequency GaN Inverter Excitation
Iron Loss Characteristics Evaluation Using a High-Frequency GaN Inverter Excitation
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Iron Loss Characteristics Evaluation Using a High-Frequency GaN Inverter Excitation

Martinez, Wilmar ; Odawara, Shunya ; Fujisaki, Keisuke

IEEE 2017-06

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2
Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
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Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy

Hsu, Po-Chun ; Simoen, Eddy ; Liang, Hu ; De Jaeger, Brice ; Bakeroot, Benoit ; Wellekens, Dirk ; Decoutere, Stefaan

WILEY-V C H VERLAG GMBH 2021-07

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3
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
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200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration

Li, Xiangdong ; Van Hove, Marleen ; Zhao, Ming ; Geens, Karen ; Lempinen, Vesa-Pekka ; Sormunen, Jaakko ; Groeseneken, Guido ; Decoutere, Stefaan

Institute of Electrical and Electronics Engineers 2017

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4
Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration
Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration
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Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration

Wang, Hongyue ; Hsu, Po-Chun ; Zhao, Ming ; Simoen, Eddy ; Sibaja-Hernandez, Arturo ; Wang, Jinyan

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2020-11

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5
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Wu, Wei-Min ; Ker, Ming-Dou ; Chen, Shih-Hung ; Sibaja-Hernandez, Arturo ; Yadav, Sachin ; Peralagu, Uthayasankaran ; Yu, Hao ; Alian, AliReza ; Putcha, Vamsi ; Parvais, Bertrand ; Collaert, Nadine ; Groeseneken, Guido

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2022-04

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6
Correlation between temperature dependence of Raman shifts and in-plane strains in an AlGaN/GaN stack
Correlation between temperature dependence of Raman shifts and in-plane strains in an AlGaN/GaN stack
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Correlation between temperature dependence of Raman shifts and in-plane strains in an AlGaN/GaN stack

Kosemura, Daisuke ; Sodan, Vice ; De Wolf, Ingrid

MELVILLE 2017

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7
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
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GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect

You, Shuzhen ; Li, Xiangdong ; Geens, Karen ; Posthuma, Niels ; Zhao, Ming ; Liang, Hu ; Groeseneken, Guido ; Decoutere, Stefaan

IOP PUBLISHING LTD 2021-03

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8
Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
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Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Li, Xiangdong ; Van Hove, Marleen ; Zhao, Ming ; Geens, Karen ; Guo, Weiming ; You, Shuzhen ; Stoffels, Steve ; Lempinen, Vesa-Pekka ; Sormunen, Jaakko ; Groeseneken, Guido ; Decoutere, Stefaan

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2018-07

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9
Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
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Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI

Li, Xiangdong ; Zhao, Ming ; Bakeroot, Benoit ; Geens, Karen ; Guo, Weiming ; You, Shuzhen ; Stoffels, Steve ; Lempinen, Vesa-Pekka ; Sormunen, Jaakko ; Groeseneken, Guido ; Decoutere, Stefaan

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019-01

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10
Mechanistic insights into low-temperature epitaxial growth of aluminum nitride films on layered transition metal dichalcogenides
Mechanistic insights into low-temperature epitaxial growth of aluminum nitride films on layered transition metal dichalcogenides
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Mechanistic insights into low-temperature epitaxial growth of aluminum nitride films on layered transition metal dichalcogenides

Hsieh, Tung Chen ; Liao, Yu-Ming ; Hsu, Wei-Fan ; Kao, Hui-Ling ; Huang, Yu-Che ; Chang, Shu-Jui ; Chen, Yu-Shian ; Hsieh, Ya-Ping

A V S AMER INST PHYSICS 2022-12

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