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Modified three-stage model for forecasting the demand for energy resources at various hierarchy levels of the economy
Modified three-stage model for forecasting the demand for energy resources at various hierarchy levels of the economy
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Modified three-stage model for forecasting the demand for energy resources at various hierarchy levels of the economy

Horskyi, V V ; Maliarenko, O Ye ; Maistrenko, N Yu ; Teslenko, O I ; Kuts, H O

IOP conference series. Earth and environmental science, 2022-06, Vol.1049 (1), p.12054 [Periódico revisado por pares]

Bristol: IOP Publishing

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2
IR study of exclusion-accumulation effects enhanced by the geometrical factor
IR study of exclusion-accumulation effects enhanced by the geometrical factor
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IR study of exclusion-accumulation effects enhanced by the geometrical factor

Malyutenko, V K ; Teslenko, G I ; Vainberg, V V ; Piotrowski, T ; Pultorak, J

Semiconductor science and technology, 2000-11, Vol.15 (11), p.1054-1060 [Periódico revisado por pares]

Bristol: IOP Publishing

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3
The transient exclusion effect in intrinsic semiconductors
The transient exclusion effect in intrinsic semiconductors
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The transient exclusion effect in intrinsic semiconductors

Malyutenko, V K ; Vainberg, V V ; Teslenko, G I ; Malyutenko, O Yu ; Pultorak, J

Semiconductor science and technology, 2002-10, Vol.17 (10), p.1058-1063, Article 1058 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Negative contrast IR emitting device based on the carrier contact exclusion
Negative contrast IR emitting device based on the carrier contact exclusion
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Negative contrast IR emitting device based on the carrier contact exclusion

Malyutenko, V K ; Vainberg, V V ; Teslenko, G I ; Malyutenko, O Yu ; Pultorak, J

Semiconductor science and technology, 2003-07, Vol.18 (7), p.697-702 [Periódico revisado por pares]

Bristol: IOP Publishing

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5
Cluster calculation of the boron centre in SiC
Cluster calculation of the boron centre in SiC
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Cluster calculation of the boron centre in SiC

Petrenko, T L ; Bugai, A A ; Baryakhtar, V G ; Teslenko, V V ; Khavryutchenko, V D

Semiconductor science and technology, 1994-10, Vol.9 (10), p.1849-1852 [Periódico revisado por pares]

Bristol: IOP Publishing

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6
Cluster calculation of boron impurities in cubic SiC, substituting for Si and C sites
Cluster calculation of boron impurities in cubic SiC, substituting for Si and C sites
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Cluster calculation of boron impurities in cubic SiC, substituting for Si and C sites

Petrenko, T L ; Teslenko, V V ; Bugai, A A ; Khavryutchenko, V D ; Klimov, A A

Semiconductor science and technology, 1996-09, Vol.11 (9), p.1276-1284 [Periódico revisado por pares]

Bristol: IOP Publishing

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7
Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption Band
Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption Band
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Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption Band

Piotrowski, T ; Wegrzecki, M ; Czerwinski, A ; Teslenko, G I ; Malyutenko, O Y ; Malyutenko, V K

Journal of physics. Conference series, 2014-01, Vol.494 (1), p.12012-5 [Periódico revisado por pares]

Bristol: IOP Publishing

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8
Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxides
Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxides
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Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxides

Prosandeyev, S A ; Teslenko, N M ; Fisenko, A V

Journal of physics. Condensed matter, 1993-12, Vol.5 (50), p.9327-9344 [Periódico revisado por pares]

IOP Publishing

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9
Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxides
Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxides
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Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxides

PROSANDEYEV, S. A ; TESLENKO, N. M ; FISENKO, A. V

Journal of physics. Condensed matter, 1993, Vol.5 (50), p.9327-9344 [Periódico revisado por pares]

Bristol: Institute of Physics

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10
Simulation of the process of interaction between the vehicle and snow in the environment of DEM and MBD-systems
Simulation of the process of interaction between the vehicle and snow in the environment of DEM and MBD-systems
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Simulation of the process of interaction between the vehicle and snow in the environment of DEM and MBD-systems

Teslenko, D S ; Belyakov, V V

IOP conference series. Materials Science and Engineering, 2021-03, Vol.1086 (1), p.12036 [Periódico revisado por pares]

Bristol: IOP Publishing

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