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Refinado por: Base de dados/Biblioteca: Institute of Physics (IOP) Journals - HEAL-Link remover
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Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications
Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications
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Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications

Bierwagen, Oliver

Semiconductor science and technology, 2015-02, Vol.30 (2), p.24001 [Periódico revisado por pares]

IOP Publishing

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2
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
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Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

Joyce, Hannah J ; Docherty, Callum J ; Gao, Qiang ; Tan, H Hoe ; Jagadish, Chennupati ; Lloyd-Hughes, James ; Herz, Laura M ; Johnston, Michael B

Nanotechnology, 2013-05, Vol.24 (21), p.214006-214006 [Periódico revisado por pares]

England: IOP Publishing

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3
Preparation of Indium Organic Frame Complex and Fluorescence Properties
Preparation of Indium Organic Frame Complex and Fluorescence Properties
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Preparation of Indium Organic Frame Complex and Fluorescence Properties

Yang, Ping ; Tang, Chengjia

Journal of physics. Conference series, 2023-08, Vol.2578 (1), p.12023 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Spectral characteristics of InP photocathode with a surface grid electrode
Spectral characteristics of InP photocathode with a surface grid electrode
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Spectral characteristics of InP photocathode with a surface grid electrode

Myazin, N S ; Smirnov, K J ; Davydov, V V ; Logunov, S E

Journal of physics. Conference series, 2017-11, Vol.929 (1), p.12080 [Periódico revisado por pares]

Bristol: IOP Publishing

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5
Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process
Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process
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Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process

Mohit ; Miyasako, Takaaki ; Tokumitsu, Eisuke

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBM02 [Periódico revisado por pares]

Tokyo: IOP Publishing

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6
Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors
Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors
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Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors

Lund, Cory ; Nakamura, Shuji ; DenBaars, Steven P ; Mishra, Umesh K ; Keller, Stacia

Semiconductor science and technology, 2019-07, Vol.34 (7), p.75017 [Periódico revisado por pares]

IOP Publishing

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7
Hydrogenated cation vacancies in semiconducting oxides
Hydrogenated cation vacancies in semiconducting oxides
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Hydrogenated cation vacancies in semiconducting oxides

Varley, J B ; Peelaers, H ; Janotti, A ; Van de Walle, C G

Journal of physics. Condensed matter, 2011-08, Vol.23 (33), p.334212-9 [Periódico revisado por pares]

England

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8
An ultra-broadband and optically transparent metamaterial absorber based on multilayer indium-tin-oxide structure
An ultra-broadband and optically transparent metamaterial absorber based on multilayer indium-tin-oxide structure
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An ultra-broadband and optically transparent metamaterial absorber based on multilayer indium-tin-oxide structure

Deng, Guangsheng ; Lv, Kun ; Sun, Hanxiao ; Yang, Jun ; Yin, Zhiping ; Chi, Baihong ; Li, Xiangxiang

Journal of physics. D, Applied physics, 2021-04, Vol.54 (16), p.165301 [Periódico revisado por pares]

IOP Publishing

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9
The method of growing InGaAs nanowires in a dual-temperature zone tube furnace
The method of growing InGaAs nanowires in a dual-temperature zone tube furnace
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The method of growing InGaAs nanowires in a dual-temperature zone tube furnace

Miao, Teng ; Liu, LinSheng

Journal of physics. Conference series, 2023-08, Vol.2553 (1), p.12025 [Periódico revisado por pares]

Bristol: IOP Publishing

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10
Fabrication of High Transmittance and High Mobility Transparent Conductive Oxide Films: Hydrogen-doped Indium Oxide
Fabrication of High Transmittance and High Mobility Transparent Conductive Oxide Films: Hydrogen-doped Indium Oxide
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Fabrication of High Transmittance and High Mobility Transparent Conductive Oxide Films: Hydrogen-doped Indium Oxide

Yang, Erqi ; Hu, Bin

Journal of physics. Conference series, 2023-06, Vol.2510 (1), p.12011 [Periódico revisado por pares]

Bristol: IOP Publishing

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