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Refinado por: assunto: Polytypism remover Base de dados/Biblioteca: DOAJ Directory of Open Access Journals remover
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Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
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Influence of Te-Doping on Catalyst-Free VS InAs Nanowires

Güsken, Nicholas A. ; Rieger, Torsten ; Mussler, Gregor ; Lepsa, Mihail Ion ; Grützmacher, Detlev

Nanoscale research letters, 2019-05, Vol.14 (1), p.179-10, Article 179 [Periódico revisado por pares]

New York: Springer US

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Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction
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Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

Köhl, Martin ; Schroth, Philipp ; Minkevich, Andrey A. ; Hornung, Jean-Wolfgang ; Dimakis, Emmanouil ; Somaschini, Claudio ; Geelhaar, Lutz ; Aschenbrenner, Timo ; Lazarev, Sergey ; Grigoriev, Daniil ; Pietsch, Ullrich ; Baumbach, Tilo

Journal of synchrotron radiation, 2015-01, Vol.22 (1), p.67-75 [Periódico revisado por pares]

5 Abbey Square, Chester, Cheshire CH1 2HU, England: International Union of Crystallography

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Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing
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Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing

Pezoldt, Jörg ; Cimalla, Volker

Crystals (Basel), 2020-06, Vol.10 (6), p.523 [Periódico revisado por pares]

Basel: MDPI AG

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Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H
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Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H

Vincent, Laetitia ; Fadaly, Elham M. T. ; Renard, Charles ; Peeters, Wouter H. J. ; Vettori, Marco ; Panciera, Federico ; Bouchier, Daniel ; Bakkers, Erik P. A. M ; Verheijen, Marcel A.

Advanced materials interfaces, 2022-06, Vol.9 (16), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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