Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Influence of Te-Doping on Catalyst-Free VS InAs NanowiresGüsken, Nicholas A. ; Rieger, Torsten ; Mussler, Gregor ; Lepsa, Mihail Ion ; Grützmacher, DetlevNanoscale research letters, 2019-05, Vol.14 (1), p.179-10, Article 179 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
|
2 |
Material Type: Artigo
|
Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffractionKöhl, Martin ; Schroth, Philipp ; Minkevich, Andrey A. ; Hornung, Jean-Wolfgang ; Dimakis, Emmanouil ; Somaschini, Claudio ; Geelhaar, Lutz ; Aschenbrenner, Timo ; Lazarev, Sergey ; Grigoriev, Daniil ; Pietsch, Ullrich ; Baumbach, TiloJournal of synchrotron radiation, 2015-01, Vol.22 (1), p.67-75 [Periódico revisado por pares]5 Abbey Square, Chester, Cheshire CH1 2HU, England: International Union of CrystallographyTexto completo disponível |
|
3 |
Material Type: Artigo
|
Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal ProcessingPezoldt, Jörg ; Cimalla, VolkerCrystals (Basel), 2020-06, Vol.10 (6), p.523 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
|
4 |
Material Type: Artigo
|
Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2HVincent, Laetitia ; Fadaly, Elham M. T. ; Renard, Charles ; Peeters, Wouter H. J. ; Vettori, Marco ; Panciera, Federico ; Bouchier, Daniel ; Bakkers, Erik P. A. M ; Verheijen, Marcel A.Advanced materials interfaces, 2022-06, Vol.9 (16), p.n/a [Periódico revisado por pares]Weinheim: Wiley Subscription Services, IncTexto completo disponível |