Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaNWei, Wei ; Qin, ZhiXin ; Zhao, Sheng ; Liu, Fang ; Fan, ShunFei ; Zheng, JiaXin ; Zhang, GuoYiMaterials science in semiconductor processing, 2012-10, Vol.15 (5), p.578-581 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDsHuang, Liubing ; Yu, Tongjun ; Chen, Zhizhong ; Qin, Zhixin ; Yang, Zhijian ; Zhang, GuoyiJournal of luminescence, 2009-12, Vol.129 (12), p.1981-1984 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Strain effect on polarized optical properties of c -plane GaN and m -plane GaNTao, Renchun ; Yu, Tongjun ; Jia, Chuanyu ; Chen, Zhizhong ; Qin, Zhixin ; Zhang, GuoyiPhysica status solidi. A, Applications and materials science, 2009-02, Vol.206 (2), p.206-210 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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4 |
Material Type: Artigo
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Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopyWei, Wei ; Qin, Zhixin ; Fan, Shunfei ; Li, Zhiwei ; Shi, Kai ; Zhu, Qinsheng ; Zhang, GuoyiNanoscale research letters, 2012-10, Vol.7 (1), p.562-562, Article 562 [Periódico revisado por pares]New York: Springer New YorkTexto completo disponível |
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5 |
Material Type: Artigo
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Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayersPan, Yaobo ; Yu, Tongjun ; Yang, Zhijian ; Wang, Huan ; Qin, Zhixin ; Hu, Xiaodong ; Wang, Kun ; Yao, Shude ; Zhang, GuoyiJournal of crystal growth, 2007, Vol.298, p.341-344 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodesTian, PengFei ; Sun, YongJian ; Chen, ZhiZhong ; Qi, ShengLi ; Deng, JunJing ; Yu, TongJun ; Qin, ZhiXin ; Zhang, GuoYiScience China Technological Sciences, 2010-02, Vol.53 (2), p.301-305 [Periódico revisado por pares]Heidelberg: SP Science in China PressTexto completo disponível |
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7 |
Material Type: Artigo
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Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extractionQi, ShengLi ; Chen, ZhiZhong ; Sun, YongJian ; Fang, Hao ; Tao, YueBin ; Sang, LiWen ; Tian, PengFei ; Deng, JunJing ; Zhao, LuBing ; Yu, TongJun ; Qin, ZhiXin ; Zhang, GuoYiScience China Technological Sciences, 2010-03, Vol.53 (3), p.769-771 [Periódico revisado por pares]Heidelberg: SP Science China PressTexto completo disponível |
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8 |
Material Type: Artigo
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Strain effect on the optical polarization properties of c-plane Al₀.₂₆Ga₀.₇₄N/GaN superlatticesFan, Shunfei ; Qin, Zhixin ; He, Chenguang ; Wang, Xinqiang ; Shen, Bo ; Zhang, GuoyiOptics express, 2014-03, Vol.22 (6), p.6322-6328 [Periódico revisado por pares]United StatesTexto completo disponível |
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9 |
Material Type: Artigo
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Strain effect on the optical polarization properties of c-plane Al_026Ga_074N/GaN superlatticesFan, Shunfei ; Qin, Zhixin ; He, Chenguang ; Wang, Xinqiang ; Shen, Bo ; Zhang, GuoyiOptics express, 2014-03, Vol.22 (6), p.6322 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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Luminescence degradation of InGaN/GaN violet LEDsYu, Tongjun ; Shang, Shuping ; Chen, Zhizhong ; Qin, Zhixin ; Lin, Liang ; Yang, Zhijian ; Zhang, GuoyiJournal of luminescence, 2007, Vol.122, p.696-699 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |