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Competitive growth mechanisms of AlN on Si (111) by MOVPE
Competitive growth mechanisms of AlN on Si (111) by MOVPE
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Competitive growth mechanisms of AlN on Si (111) by MOVPE

Feng, Yuxia ; Wei, Hongyuan ; Yang, Shaoyan ; Chen, Zhen ; Wang, Lianshan ; Kong, Susu ; Zhao, Guijuan ; Liu, Xianglin

Scientific reports, 2014-09, Vol.4 (1), p.6416-6416, Article 6416 [Periódico revisado por pares]

England: Nature Publishing Group

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2
Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
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Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy

Zhang, Riqing ; Zhang, Panfeng ; Kang, Tingting ; Fan, Haibo ; Liu, Xianglin ; Yang, Shaoyan ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2007-10, Vol.91 (16) [Periódico revisado por pares]

United States

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3
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
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Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

Xu, Xiaoqing ; Liu, Xianglin ; Guo, Yan ; Wang, Jun ; Song, Huaping ; Yang, Shaoyan ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of applied physics, 2010-05, Vol.107 (10), p.104510-104510-6 [Periódico revisado por pares]

American Institute of Physics

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4
Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy
Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy
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Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Li, Huijie ; Liu, Xianglin ; Sang, Ling ; Wang, Jianxia ; Jin, Dongdong ; Zhang, Heng ; Yang, Shaoyan ; Liu, Shuman ; Mao, Wei ; Hao, Yue ; Zhu, Qinsheng ; Wang, Zhanguo

Physica Status Solidi. B: Basic Solid State Physics, 2014-04, Vol.251 (4), p.788-791 [Periódico revisado por pares]

Blackwell Publishing Ltd

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5
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Li, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2012-06, Vol.348 (1), p.10-14 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
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Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

Jia, Caihong ; Chen, Yonghai ; Guo, Yan ; Liu, Xianglin ; Yang, Shaoyan ; Zhang, Weifeng ; Wang, Zhanguo

Nanoscale research letters, 2011-04, Vol.6 (1), p.316-316, Article 316 [Periódico revisado por pares]

New York: Springer New York

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7
A Theoretical Calculation of the Impact of GaN Cap and AlxGa1―xN Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/AlxGa1―xN/GaN Heterostructure
A Theoretical Calculation of the Impact of GaN Cap and AlxGa1―xN Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/AlxGa1―xN/GaN Heterostructure
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A Theoretical Calculation of the Impact of GaN Cap and AlxGa1―xN Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/AlxGa1―xN/GaN Heterostructure

GUIPENG LIU ; JU WU ; QINSHENG ZHU ; ZHANGUO WANG ; YANWU LU ; BIAO ZHANG ; CHENGMING LI ; LING SANG ; YAFENG SONG ; KAI SHI ; XIANGLIN LIU ; SHAOYAN YANG

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4272-4275 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

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8
Growth of c-oriented ZnO films on (001) SrTiO3 substrates by MOCVD
Growth of c-oriented ZnO films on (001) SrTiO3 substrates by MOCVD
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Growth of c-oriented ZnO films on (001) SrTiO3 substrates by MOCVD

Jia, Caihong ; Chen, Yonghai ; Liu, Genhua ; Liu, Xianglin ; Yang, Shaoyan ; Wang, Zhanguo

Journal of crystal growth, 2008-12, Vol.311 (1), p.200-204 [Periódico revisado por pares]

Amsterdam: Elsevier

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9
Dislocation scattering in AlxGa1−xN∕GaN heterostructures
Dislocation scattering in AlxGa1−xN∕GaN heterostructures
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Dislocation scattering in AlxGa1−xN∕GaN heterostructures

Xu, Xiaoqing ; Liu, Xianglin ; Han, Xiuxun ; Yuan, Hairong ; Wang, Jun ; Guo, Yan ; Song, Huaping ; Zheng, Gaolin ; Wei, Hongyuan ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2008-11, Vol.93 (18) [Periódico revisado por pares]

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10
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells
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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells

Liu, Guipeng ; Wu, Ju ; Lu, Yanwu ; Zhao, Guijuan ; Gu, Chengyan ; Liu, Changbo ; Sang, Ling ; Yang, Shaoyan ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2012-04, Vol.100 (16) [Periódico revisado por pares]

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